Metal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric

Lukosius, M.; Baristiran-Kaynak, Canan; Abrutis, A.; Skapas, Martynas; Kubilius, V.; Zauner, A.; Ruhl, G.; Wenger, Christian

doi:10.1016/j.mee.2011.03.044

Cited by 4 publications

(2 citation statements)

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“…Numerous conventional oxides such as TiO 2 , HfO 2 ,Ta 2 O 5 ,Y 2 O 3 ,Pr 2 O 3 , Al 2 O 3 and (Ba, Sr) TiO 3 have been investigated for such a purpose [1,3,5,[8][9][10][11]. In order to improve the properties of pure materials and to overcome the undesired high leakage current generated by these materials, many researchers have focused their works on the mixed phase high-k insulating materials such as CeAlO, TiPrO, SrTaO, HfTiO, TiNiO and TiLaO [2][3][4][5][6][7][12][13][14][15]. Recently, TiTaO thin films, mainly composed of a mixture of two phases (TiO 2 and Ta 2 O 5 ) [12], were used to overcome the issue of high leakage current without sacrificing the capacitance density.…”

Section: Introductionmentioning

confidence: 99%

Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect

Rouahi¹,

Kahouli²,

Challali³

et al. 2013

J. Phys. D: Appl. Phys.

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The influence of phases and phase's boundaries of TiO 2 and Ta 2 O 5 in the dielectric and electric response of TiTaO (100 nm thick) elaborated by RF magnetron sputtering was highlighted by complex impedance spectroscopy. Dielectric and electric modulus properties were studied over a wide frequency range (0.1-10 5 Hz) and at various temperatures (−160 to 120 • C). The diagram of Argand (ε ′′ versus ε ′ ) shows the contribution of phases, phases' boundaries and conductivity effect on the electric response of TiTaO thin films. Moreover, the resistance of the material decreases when the temperature increases, thus the material exhibits a negative temperature coefficient of resistance. The electric modulus plot indicates the presence of two peaks of relaxation. The first relaxation process appears at low temperature with activation energy of about 0.22 eV and it is related to the first ionization energy of oxygen vacancies. The second relaxation process appears at high temperature with activation energy of about 0.44 eV. This second peak is attributed to the Maxwell-Wagner-Sillars relaxation. The plots of the complex dielectric modulus and the impedance as a function of frequency allow concluding to a localized relaxation due to the long-range conductivity in the TiTaO film.

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Section: Introductionmentioning

confidence: 99%

Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect

Rouahi¹,

Kahouli²,

Challali³

et al. 2013

J. Phys. D: Appl. Phys.

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show abstract

“…Ce-Al-O thin films were prepared by pulsed injection metal organic chemical vapor deposition (PI-MOCVD). Depositions were carried out at 400 ºC using two separate Ce and Al precursors [6].…”

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confidence: 99%