Metal-insulator-semiconductor solar cells using amorphous Si:F:H alloys

Madan, A.; McGill, J.; Czubatyj, W.; Yang, Jeffrey; Ovshinsky, Stanford R.

doi:10.1063/1.92095

Cited by 59 publications

(3 citation statements)

References 11 publications

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“…Such low values of n (=1.2) are normally observed in Schottky Barrier and MIS type devices where the transport is dominated by majority carriers (electrons) [9].…”

Section: Resultsmentioning

confidence: 98%

Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices

McMahon¹,

Madan²

1985

MRS Proc.

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It is well known that the performance of hydrogenated amorphous silicon (a-Si) p-i-n type devices is determined by the sequence of deposition. For instance, the stainless steel/p-i-n configuration generally shows a larger value of the open circuit voltage (up to 200mV) compared to the n-i-p sequence of deposition \1,2]. Explanations of this phenomena such as the Dember potential \1], self field effect \2], residual doping \3], hydrogen effusion effects associated with the p+ layer deposition process \4, 5] are unable to satisfactorily explain the difference in performance.

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“…Such low values of n (=1.2) are normally observed in Schottky Barrier and MIS type devices where the transport is dominated by majority carriers (electrons) [9].…”

Section: Resultsmentioning

confidence: 98%

Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices

McMahon¹,

Madan²

1985

MRS Proc.

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“…The effect of alloying halogen such as F or Cl [12] to a-Si:H was also investigated and has shown to have potential in certain applications [13]. So far a-Si, C:H has emerged as leading contender in large bandgap alloys in amorphous silicon based photovoltaic devices by serving as photon energy absorbing window layers in multi-junction cells [9].…”

Section: Introductionmentioning

confidence: 98%

Effect of illumination on hydrogenated amorphous silicon thin films doped with chalcogens

Sharma

Kumar

Kang

et al. 2009

Journal of Non-Crystalline Solids

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“…Most of the studies were made on preparation and investigation of the properties of a-Si : H alloy with tetrahedrally co-ordinated elements such as C and Ge [7]. The effect of alloying halogen such as F or Cl [8] to a-Si : H was also investigated and has shown to have potential in certain applications [9]. So far a-Si,C : H has emerged as leading contender in large bandgap alloys in amorphous silicon based photovoltaic devices by serving as photon energy absorbing window layers in multi-junction cells.…”

Section: Introductionmentioning

confidence: 99%

The Dependence of Optical Constants on Selenium and Sulphur-Doping in a-Si:H

Sharma¹,

Baveja²,

Mehra³

2002

phys. stat. sol. (a)

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Hydrogenated amorphous silicon–selenium and silicon–sulphur thin films were prepared by the decomposition of SiH4 and H2Se/H2S gas mixtures in an rf plasma glow discharge at a substrate temperature of 230 °C. Optical and electrical measurements show that increasing the selenium content above the gas ratio, H2Se/SiH4 = 10—3, results in an increase in the size of the optical (Tauc) gap and a decrease in the dark conductivity. The band gap of Se‐doped a‐Si:H was found to be between 1.79 and 1.89 eV as the gas ratio (H2Se/SiH4) increased from 10—4 to 10—1 and for S‐doped a‐Si:H lied between 1.80 and 1.96 eV as the gas ratio (H2S/SiH4) increased from 6.8 × 10—7 to 10—4. The refractive index n was calculated from transmission spectra and the value of n was found to decrease with increasing wavelength as well as doping concentration in the wavelength range of 650 to 950 nm. The Urbach energy and defect density were obtained from subgap absorption measurements.

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Metal-insulator-semiconductor solar cells using amorphous Si:F:H alloys

Abstract: Metal-insulator-semiconductor-type photovoltaic devices using amorphous Si:F:H alloys have been fabricated. Conversion efficiencies of up to 6.3% under AM:1 illumination have been observed. These represent the highest efficiencies yet reported for amorphous thin-film solar cells.

Cited by 59 publications

References 11 publications

Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices

Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices

Effect of illumination on hydrogenated amorphous silicon thin films doped with chalcogens

The Dependence of Optical Constants on Selenium and Sulphur-Doping in a-Si:H

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