This paper presents the results of a systematic study of oxygen incorporation in a-Si:H alloys produced by the glow-discharge decomposition of SiH4, H2, and 02. We identify four oxygen-related absorption bands, at 2090, 980, 780, 500 cm ', and show that the absorption strength in each band scales linearly with the oxygen concentration. We demonstrate that oxygen can increase the solubility of hydrogen in a-Si in the monohydride bonding geometry. The features identified above are shown to be characteristic of a bonding site in which the oxygen and hydrogen atoms are bonded to the same silicon atom. We find no features in the infrared absorption that are associated with bonding configurations having OH groups. In films containing both oxygen and polysilane bonding, as evidenced by the doublet absorption at 845 and 890 cm ', we find no evidence for bonding sites in which a substantial fraction of the silicon atoms have one oxygen and two hydrogen neighbors.

We have studied the local bonding of nitrogen atoms in glow-dischargedeposited films of a-Si:H by using ir absorption spectroscopy. We find two different bonding environments for N, which are identified through different frequencies for the Si-N asymmetric bond-stretching vibration, 840 cm ' for the high-T, films, and 790 cm ' for the low-T, films. In films deposited on substrates held at temperatures in excess of 300'C, the N is incorporated in a planar site with three silicon nearest neighbors, and one hydrogen second-nearest neighbor. In films produced on substrates held below 200'C, the N atom is also in a threefold-coordinated planar site, but with all of the nearest and second-nearest atoms being Si atoms.

No abstract

Chalcogenide thin film resistor elements are being integrated with CMOS structures for nonvolatile memory applications. This paper reports on the first total dose and imprint data published on this new technology demonstrating no observable effects on chalcogenide films after exposure to 1 Mrad(Si) and 125 C temperature.

No abstract