Chalcogenide thin film resistor elements are being integrated with CMOS structures for nonvolatile memory applications. This paper reports on the first total dose and imprint data published on this new technology demonstrating no observable effects on chalcogenide films after exposure to 1 Mrad(Si) and 125 C temperature.

X-ray lithography provides a means of replicating, in a single large-area exposure, submicron linewidth patterns made by scanning electron beam lithography. The technique is complementary to existing electron beam technology, and provides a number of unique advantages: (i) it is simple and inexpensive; (ii) the penetrating character of x-rays makes it relatively insensitive to contamination; (iii) both positive and negative type resists can be used; and (iv) because of the absence of backscattering effects, both positive and negative type patterns can be made with equal facility. Exposure times of seven minutes have been achieved for 3 μ mask-sample gaps. This can be decreased to less than one minute by using a rotating anode, or by reducing the mask-sample gap. The most recent results in x-ray lithography are reported, including the fabrication of surface wave devices. The elements of a multiple-mask alignment system are described. This system should permit the rapid and automatic superposition on a substrate of patterns from several different masks, to a precision of 1/10 μ.

Carbon tetrachloride plasma etching can be performed in a regime in which a film-like product is simultaneously formed on vertical surfaces but inhibited from forming on horizontal surfaces. If the photoresist profile is properly tailored, this process is capable of etching polysilicon or layered refractory metal (tantalum, molybdenum) silicidedoped polysilicon films with virtually no change in ]inewidth from the developed photoresist image. We discuss the influence of the masking profile on the etched film profile and present conditions necessary for controlled film formation.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 133.19.63.5 Downloaded on 2015-06-07 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 133.19.63.5 Downloaded on 2015-06-07 to IP

The effects of excess Pb and Zr/Ti ratio on crystallization behavior and ferroelectric properties of sol-gel derived films were studied. Excess Pb was found to reduce the crystallization temperature. Films with good ferroelectric properties (remanent polarization greater than 8 μC/cm2 ) were achieved after 550 °C, 5 minute crystallization. The difference in the magnitude of the charge in response to switching and non-switching pulses was greater than 1 μC/cm2 after 1011 fatigue cycles for many of the films. The arnount of charge remaining after fatigue was found to be dependent on the initial charge. Reducing the partial pressure of oxygen during crystallization affected both the remanent polarization and fatigue behavior. The fatigue rate was relatively independent of composition and crystallization temperature.