Controlled Film Formation during CCl4 Plasma Etching

Bernacki, S. E.; Kosicki, B. B.

doi:10.1149/1.2115993

Cited by 17 publications

(8 citation statements)

References 5 publications

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“…Indeed not a negligible amount of nitrogen is detected in this film, and there is a difference in the O and C1 content. The formation of carbon-rich films during plasma etching with C containing gases is widely reported (16)(17)(18); in our case we do not use C containing gases so that the source for the carbon is the photoresist (19).…”

Section: Resultsmentioning

confidence: 98%

Surface Characterization of the Al/Si‐Ti/W Metallization after Chlorinated Plasma Treatments

Torrisi

Vasquez

Viscuso

et al. 1991

J. Electrochem. Soc.

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Multilayer metallizations play a very important role as interconnection systems in the VLSI technology. Here, to realize etching with good dimensional control and vertical profile, plasma etchers (of the RIE type) are used. The complexity of the chemistry involved in this plasma etching is such that it may give rise to some undesirable secondary effects. The object of this work is the surface characterization, by means of XPS, SEM, and EDAX techniques, of the A1/Si-Ti/W system after plasma etching. The chemical modifications induced by various plasma treatments of the metal films have been followed by means of the above techniques. Such modifications are dependent either on the etch chemistry used or on the substrate chemical species exposed to the plasma.Very large scale integration (VLSI) technology requires increasing the chip size and decreasing the minimum feature size. This objective is achieved by continuous developments in lithographic and etching techniques and by improvements in materials technology. The materials used for the interconnections can be metals, heavily doped polysilicon, and metal polycides. In general the main properties required for these materials are: low resistivity, good chemical and high temperature resistance, good barrier properties, low contact resistance, good step coverage, resistance to electromigration, and ease of patterning.Aluminum is the most widely used metal for interconnections in integrated circuits thanks to its many good properties such as low resistivity, excellent substrate adhesion, and ease of deposition and patterning. At the same time, aluminum has some important limitations: bad temperature resistance, hillock formation, and moreover it has the tendency to interact with silicon causing the "spikes" problem (spikes can penetrate into the silicon and cause shorts). In order to avoid this phenomenon, Al-alloy (1) is currently employed. A1/Si alloy reduces the silicon diffusion problem, but the possible precipitation of silicon at the metal-silicon interface after the alloy thermal process causes an increase in the contact resistance. A1/Si/Cu alloy has low resistivity and good resistance to electromigration, but it still has some problems: poor high-temperature resistance and hillock formation (as well as A1 and A1/Si) and, mainly, difficult patternability by dry etch for corrosion problems (2).In this context the use of refractory metals and their silicides represents an improvement, mainly in solving the contact problem. In general the refractory metals have higher resistivity than A1, but they have very good performances as the diffusion barrier between A1 and Si, and form at the same time good ohmic contacts and/or good Schottky contacts. Ti (3), W (4), and Ti/W (5) are among the most studied of these materials.Therefore a metallization that is constituted of a layer of refractory metal on the contacts under a layer of an A1 alloy as interconnection material can be considered an excellent solution.Pattern definition for VLSI circuits requires the use of dry ...

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Section: Resultsmentioning

confidence: 98%

Surface Characterization of the Al/Si‐Ti/W Metallization after Chlorinated Plasma Treatments

Torrisi

Vasquez

Viscuso

et al. 1991

J. Electrochem. Soc.

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“…These atoms attack organic materials to form CO, CO 2 , and H 2 O as final products. 29) The main degradation mechanism appears to be random chain scission. 30) In the case of PET etching using the oxygen plasma, there are isotropic radical etching, anisotropic ion etching, and coexistence conditions according to processing conditions.…”

Section: Dry Etching Of Pet Filmsmentioning

confidence: 99%

Facile fabrication of a poly(ethylene terephthalate) membrane filter with precise arrangement of through-holes

Kihara

Odaka

Kuboyama

et al. 2018

Jpn. J. Appl. Phys.

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Although membrane filters are indispensable in biochemical analysis fields, most methods for through-hole fabrication are complex and inefficient. We developed a simple method of fabricating poly(ethylene terephthalate) (PET) membrane filters with a precise arrangement of through-holes for the isolation of circulating tumor cells (CTCs) based on their size. By photolithography and dry etching, highly packed 380,000 through-holes with a diameter of 7 µm were able to cover a whole area with a diameter of 13 mm. Device fabrication for the size-based capture of rare cells in blood such as CTCs is realized in this study.

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“…C1 is lost from the CC14 discharge by gas-phase reactions, diffusion to and reaction on chamber walls, and convec-tion. The primary gas-phase reactions which consume C1 are kg C1 + CC13 ---> CC14 [3] kg' CI+CI+M ---> C12+M [4] where kg = 1.1 • 10 -12 cm3/s [Ref. (10)] or kg = 1 • 10 10 cm~/s [Res (9) and references therein], and kg' = 4.25 • 101~ cm 6 M-2/s = 1.17 • 10 -32 cm6/s [Ref.…”

Section: Modeling the Cci4/he Processmentioning

confidence: 99%

“…It is also possible that part of the CC13-C1 recombination is taking place on the electrodes, hence reaction [3] could also occur on the electrode surfaces.…”

Section: Cl+smentioning

confidence: 99%

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n+‐Polysilicon Etching in CCl4 / He Discharges: Characterization and Modeling

Gogolides

Sawin

1989

J. Electrochem. Soc.

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The characterization of n § etching in CC14/He discharges was undertaken using a Box-Behnken experimental design. Etching rate, ion flux, C1 concentration, and selectivity with respect to the underlying oxide were measured as a function of three variables: power, pressure, and He fraction over ranges of 0.4-1.2 W/cm 2, 150-300 mtorr, and He percentage between 20 and 50, respectively. The process is anisotropic with a small linewidth loss (0.1-0.2 ~m), which is almost independent of the process parameters over the ranges explored and does not seem to vary with overetching. The selectivity varies between 10 and 21. Kinetic modeling of the process successfully predicts the atomic C1 concentration and indicates that CC14 dissociates in the discharge substantially (possibly more than 45%); the extent of dissociation depends on the power and the residence time. The primary etchant is assumed to be atomic C1, which has an etching rate that is enhanced by ion bombardment. The experimental data were successfully modeled assuming that C1 competes with carbonaceous species for sorption on the polysilicon surface, thus causing the etching rate to be inversely proportional to the total CC14 concentration.

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Controlled Film Formation during CCl4 Plasma Etching

Cited by 17 publications

References 5 publications

Surface Characterization of the Al/Si‐Ti/W Metallization after Chlorinated Plasma Treatments

Surface Characterization of the Al/Si‐Ti/W Metallization after Chlorinated Plasma Treatments

Facile fabrication of a poly(ethylene terephthalate) membrane filter with precise arrangement of through-holes

n+‐Polysilicon Etching in CCl4 / He Discharges: Characterization and Modeling

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