Metal-metal epitaxy on germanium near room temperatures: Ni(100)/Cu(100)/Ge(100)

(100)-oriented FeCu films, containing 80 and 50 at. % Fe, have been deposited on (100) Si using (100) Pd/Cu seed layers. Heating of the samples helps identify the structures of the FeCu films, especially the one with 50 at. % Fe. The FeCu(50/50) film shows a structure with possibly two phases: one with a lattice spacing close to that of (100) Fe, and one to that of (100) Cu, henceforth assigned to the Fe- and Cu-stabilized FeCu phases, respectively. The FeCu(80/20) film shows only one phase, with a lattice spacing close to that of (100) Fe. Ferromagnetic characteristics are detected up to an anneal of 30 min at 600 °C for the FeCu(80/20) films, with a reduced saturation magnetization above 400 °C. For the FeCu(50/50) films, their ferromagnetic characteristics remain little changed up to 300 °C, with reduced saturation magnetization at 400 °C, and disappear completely after an anneal at 500 °C. The results are compared with those containing elemental Fe layers deposited on different metal seeds, and the reaction mechanisms of the present structures are discussed.

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Reactions and orientation effects of the Fe/Pd/Cu/Si, Fe/Ag/Pd/Cu/Si, Fe/Au/Pd/Cu/Si, and Fe/Pt/Pd/Cu/Si structures using (100) and (111) Si

Chang

1992

Journal of Applied Physics

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(100)- and (110)-oriented Fe films, grown on Pd/Cu/Si, Ag/Pd/Cu/Si, Au/Pd/Cu/Si, and Pt/Pd/Cu/Si using (100) and (111) Si, respectively, have been heated to 600 °C, and the reactions studied. The (100) Fe films remain little changed both structurally and magnetically, after an anneal of 30 min between 300 and 400 °C in an ambient of N2-H2 (9:1). The saturation magnetization shows little change at 400 °C, while the coercivity increases at this temperature. Above 400 °C, the Fe films degrade depending on the structures grown. For the Fe/Pd/Cu/Si and Fe/Pt/Pd/Cu/Si structures, both the magnetic and structural characteristics of Fe remain partially intact at 600 °C. In both cases, the Pt and Pd layers have been consumed for the silicide formation above 400 °C. For the Fe/Ag/Pd/Cu/Si structure, Fe rapidly degrades at 500 °C, with Ag being little changed till 600 °C. For the Fe/Au/Pd/Cu/Si structure, the formation of the bulk Au-Si eutectic melt at 363 °C completely destroys the Fe layer above 400 °C. In comparison, a lower thermal stability is observed for the (110) Fe layers grown on (111) metal seeds using (111) Si, with reduced saturation magnetizations at 400 °C. A larger diffusion of Pd, Ag, Au, and Pt into the (110) Fe layers is also observed than those deposited on (100) Si. The mechanisms involved are discussed and are related to the different thermal stabilities observed.

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Metal-metal epitaxy on germanium near room temperatures: Ni(100)/Cu(100)/Ge(100)

Cited by 6 publications

References 23 publications

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The electrodeposition of copper onto UHV-prepared GaAs(001) surfaces

Structure, magnetization, and thermal stability of (100) FeCu films deposited on Pd/Cu/Si(100)

Reactions and orientation effects of the Fe/Pd/Cu/Si, Fe/Ag/Pd/Cu/Si, Fe/Au/Pd/Cu/Si, and Fe/Pt/Pd/Cu/Si structures using (100) and (111) Si

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