Metal‐Organic Framework Nanofilm for Mechanically Flexible Information Storage Applications

Abstract

1wileyonlinelibrary.com of any digital gadgets, the information storage chips should also be made fl exible for wearable applications. [8][9][10][11] In view of this, the recently developed resistance random access memories (RRAMs), which received tremendous amount of attention as an alternative to the chargebased memories such as dynamic random access memory and fl ash memory, have distinguished themselves as promising candidates for fl exible and consumer electronic applications, with the advantages of simple structure, easy fabrication process, and low-cost potential. [12][13][14][15] However, there still exist scientifi c and technical challenges at the moment that impede the fl exible resistive memories from practical applications. For instance, the brittle inorganic materials-based memories, which usually demonstrate reliable storage performance on rigid substrates, suffer severely from the limited adaptivity to large strains upon repeated bending or stretching operations. [ 16,17 ] On the contrary, though the soft organic electronic materials carries inherent mechanical-fl exibility, the poor resistance to the changing environments makes them improper for working under harsh conditions. [ 18,19 ] Moreover, the memory devices should remain stable and reliable under various deformation scenarios to avoid any possible misoperation on the stored data. Thus, more efforts should be devoted by material scientists toward designing novel materials with new functionalities.With these concerns, the metal-organic frameworks (MOFs), which can be taken as the rigid metal oxide matrix extended by soft organic linkers and possess the features of both inorganic and organic materials, [21][22][23] may provide alternative strategy for the construction of fl exible resistive memories. Very recently, it is documented that the conductivity states of a metal/macroscopic MOF single crystal/metal structure can be tuned bistably by the self-limiting oxidative reaction of the metal anode involving liquid species. [ 24 ] We also observed stable and low power resistance switching effect in MOF single crystals, which is probably related to the ferroelectric transition of N···H-O···H-N bridge-structured dipoles of guest water molecules inside the MOF nanochannels. [ 25 ] Nevertheless, it is still challenging at the moment to construct a liquid-free and fl exible MOF thin fi lm for practical wearable information storage applications. Inspired by these, we herein report the direct deposition of a high quality MOF nanofi lm, HKUST-1, on fl exible Metal-Organic Framework Nanofi lm for Mechanically Flexible Information Storage ApplicationsLiang Pan , Zhenghui Ji , Xiaohui Yi , Xiaojian Zhu , Xinxin Chen , Jie Shang , Gang Liu , * and Run-Wei Li * Metal-organic frameworks (MOFs), which are formed by association of metal cations or clusters of cations ("nodes") with soft organic bridging ligands ("linkers"), are a fascinating class of fl exible crystalline hybrid materials offering potential strategy for the construction of fl exible elect...

Intrinsically Stretchable Resistive Switching Memory Enabled by Combining a Liquid Metal–Based Soft Electrode and a Metal–Organic Framework Insulator

“…[2,[4][5][6] Resistive switching memories (or RRAM in short), which use bistable resistance states to encode and storage binary digital data, are considered as one of the most promising candidates for the next-generation information storage technology. [10][11][12][13][14] For instance, by depositing hafnium oxide directly on plastic substrate, Shang et al successfully made flexible RRAM device that can be bent to the strain level of 3.18%. [10][11][12][13][14] For instance, by depositing hafnium oxide directly on plastic substrate, Shang et al successfully made flexible RRAM device that can be bent to the strain level of 3.18%.…”

Metal–Organic Frameworks in Modern Physics: Highlights and Perspectives

“…[97] Light can also stimulate the transition between two structural states in MOFs with special photochromic molecules as ligands or guests. [28,[107][108][109] However, there are still issues hindering their real-world application, as an increase to the switching rate to THz and higher is required, and minimization of the area of tuneable MOFs needs to be addressed. This effect is achieved based on the MOF's azobenzene side groups, which can undergo lightinduced reversible isomerization between two cis and trans stable states.…”

Recent Advances in Memory Devices with Hybrid Materials

“…Wang et al reported Hong Kong University of Science and Technology 1 (HKUST-1) which was integrated with surfaceanchored metal-organic framework (SURMOF)-based resistive switching memory. [123] A forming voltage of 15 V was required to trigger the device. The ferrocene which is infiltrated guest molecules can be inserted inside the pores of the HKUST-1 material (Figure 5a).…”

“…a) Schematic image of HKUST-1 SURMOF films grown by liquid-phase epitaxy. Reproduced with permission [123]. Reproduced with permission [122].…”