1wileyonlinelibrary.com of any digital gadgets, the information storage chips should also be made fl exible for wearable applications. [8][9][10][11] In view of this, the recently developed resistance random access memories (RRAMs), which received tremendous amount of attention as an alternative to the chargebased memories such as dynamic random access memory and fl ash memory, have distinguished themselves as promising candidates for fl exible and consumer electronic applications, with the advantages of simple structure, easy fabrication process, and low-cost potential. [12][13][14][15] However, there still exist scientifi c and technical challenges at the moment that impede the fl exible resistive memories from practical applications. For instance, the brittle inorganic materials-based memories, which usually demonstrate reliable storage performance on rigid substrates, suffer severely from the limited adaptivity to large strains upon repeated bending or stretching operations. [ 16,17 ] On the contrary, though the soft organic electronic materials carries inherent mechanical-fl exibility, the poor resistance to the changing environments makes them improper for working under harsh conditions. [ 18,19 ] Moreover, the memory devices should remain stable and reliable under various deformation scenarios to avoid any possible misoperation on the stored data. Thus, more efforts should be devoted by material scientists toward designing novel materials with new functionalities.With these concerns, the metal-organic frameworks (MOFs), which can be taken as the rigid metal oxide matrix extended by soft organic linkers and possess the features of both inorganic and organic materials, [21][22][23] may provide alternative strategy for the construction of fl exible resistive memories. Very recently, it is documented that the conductivity states of a metal/macroscopic MOF single crystal/metal structure can be tuned bistably by the self-limiting oxidative reaction of the metal anode involving liquid species. [ 24 ] We also observed stable and low power resistance switching effect in MOF single crystals, which is probably related to the ferroelectric transition of N···H-O···H-N bridge-structured dipoles of guest water molecules inside the MOF nanochannels. [ 25 ] Nevertheless, it is still challenging at the moment to construct a liquid-free and fl exible MOF thin fi lm for practical wearable information storage applications. Inspired by these, we herein report the direct deposition of a high quality MOF nanofi lm, HKUST-1, on fl exible Metal-Organic Framework Nanofi lm for Mechanically Flexible Information Storage ApplicationsLiang Pan , Zhenghui Ji , Xiaohui Yi , Xiaojian Zhu , Xinxin Chen , Jie Shang , Gang Liu , * and Run-Wei Li * Metal-organic frameworks (MOFs), which are formed by association of metal cations or clusters of cations ("nodes") with soft organic bridging ligands ("linkers"), are a fascinating class of fl exible crystalline hybrid materials offering potential strategy for the construction of fl exible elect...

Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfO/ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.

Thermally stable poly(triphenylamine) (PTPA) synthesized by an oxidative coupling reaction is used as the functional layer in memory devices, which exhibit non-volatile bistable resistive switching behavior with a large ON/OFF ratio over 5 × 10(8), a long retention time exceeding 8 × 10(3) s and a wide working temperature range of 30-390 K.