Metal oxide-based gas sensor research: How to?

Bârsan, Nicolae; Koziej, Dorota; Weimar, Udo

doi:10.1016/j.snb.2006.09.047

Cited by 1,497 publications

(823 citation statements)

References 113 publications

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“…We note that a practical sensor can only be obtained by measuring in real sensor's working conditions; changing background conditions should not affect the sensor performance [1]. The selectivity of our sensor towards humidity and other interfering gases has not yet been investigated.…”

Section: Functional No 2 Sensormentioning

confidence: 99%

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Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors Andringa, Anne-Marije; Vlietstra, Nynke; Smits, Edsger C. P.; Spijkman, Mark-Jan; Gomes, Henrique L.; Klootwijk, Johan H.; Blom, Paul W. M.; de Leeuw, Dago M. Link to publication in University of Groningen/UMCG research database Citation for published version (APA): Andringa, A-M., Vlietstra, N., Smits, E. C. P., Spijkman, M-J., Gomes, H. L., Klootwijk, J. H., ... de Leeuw, D. M. (2012). Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors. Sensors and actuators b-Chemical, 171(27), 1172-1179. DOI: 10.1016/j.snb.2012 Copyright Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated relaxation times. We find an activation energy of 0.1 eV for trapping and 1.2 eV for detrapping. The attempt-to-escape frequency and characteristic temperature have been determined as 1 Hz and 960 K for charge trapping and 10 11 Hz and 750 K for recovery, respectively. Thermally stimulated current measurements confirm the presence of trapped charge carriers with a trap depth of around 1 eV. The obtained functional dependence is used as input for an analytical model that predicts the sensor's temporal behavior. The model is experimentally verified and a real-time sensor has been developed. The perfect agreement between predicted and measured sensor response validates the methodology developed. The analytical description can be used to optimize the driving protocol. By adjusting the operating temperature and the duration of charging and resetting, the response time can be optimized and the sensitivity can be maximized for the desired partial NO 2 pressure window.

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Section: Functional No 2 Sensormentioning

confidence: 99%

“…Commercial sensors are typically chemiresistors, which monitor changes in grain boundary resistances [1][2][3]. In recent years, field-effect transistors have been suggested as an alternative sensing technology [4,5].…”

Section: Introductionmentioning

confidence: 99%

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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“…Although transport of charge carriers across the semiconductor surface is a complex process, the electron transport dynamics is satisfactorily described by field effects arising from the coulombic charge of both the charge carriers and surface states (including oxygen states O n-), and iii) electron-lattice interactions [3][4][5][6][7]12,14,29,33]. G* is also a parameter that includes the influence on the surface by the gas-phase surroundings and accounts for the concentration of reactive gas-phase [46].…”

Section: Filmsmentioning

confidence: 99%

“…O 2ˉ, Oˉ, O 2-) that exist as a result of both the adsorption of molecular oxygen and electron transfer reactions. Oxygen species promote the operation of electrical fields in the metal-oxide surface, modify charge carrier concentration, cause bending of the conduction level and shifts in the energy of Fermi electrons near the metal-oxide surface [3][4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

Gonzalez¹,

Dunford²,

Du³

et al. 2013

Journal of Solid State Chemistry

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/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr Access and use of this website and the material on it are subject to the Terms and Conditions set forth at http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://dx.doi.org/10.1016/j.jssc.2013.02.002 Chemistry, 201, pp. 35-40, 2013-02-10 Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis Gonzalez, Carlos M.; Dunford, Jeffrey L.; Du, Xiaomei; Post, Michael L. Abstract: CuWO 4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO 4 thin-films was determined over the 100 °C -500 °C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and 500°C have been measured for oxygen partial pressures (0.1 atm < p(O 2 ) < 0.9 atm) in nitrogen. The apparent activation energy ∆E a for the electrical conduction has been estimated. The study of the temperature effect on the electron transport properties of CuWO 4 thin-films reveals the operation of two temperature-dependent oxygen states. The effect of varying oxygen concentration on the electronic properties is discussed in detail. The electrochemical nature of the operating oxygen states for the 100°C -500 °C temperature range is deduced using a physicochemical model that relates electronic conductivity with oxygen partial pressure and temperature. Journal of Solid State Characterization of Carrier States in CuWO

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“…Accordingly, various sensors such as gas, pressure, illumination, tilt, temperature, and motion sensors have been heavily studied to more precisely measure and monitor changes in environments [2]. In particular, diverse applications of the gas sensor in broad fields including the detection of air pollutants and gaseous hazards, homeland security, medical diagnosis, and fuel combustion control have accelerated studies for high-performance gas sensors [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Design of Metal Oxide Hollow Structures Using Soft-templating Method for High-Performance Gas Sensors

Shim¹,

Jang²

2016

Journal of Sensor Science and Technology

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Semiconductor gas sensors based on metal oxide are widely used in a number of applications, from health and safety to energy efficiency and emission control. Nanomaterials including nanowires, nanorods, and nanoparticles have dominated the research focus in this field owing to their large number of surface sites that facilitate surface reactions. Recently, metal oxide hollow structures using soft templates have been developed owing to their high sensing properties with large-area uniformity. Here, we provide a brief overview of metal oxide hollow structures and their gas-sensing properties from the aspects of template size, morphology, and additives. In addition, a gassensing mechanism and perspectives are presented.

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Metal oxide-based gas sensor research: How to?

Cited by 1,497 publications

References 113 publications

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

Design of Metal Oxide Hollow Structures Using Soft-templating Method for High-Performance Gas Sensors

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