Metal–oxide–semiconductor field-effect transistor with a vacuum channel

Srisonphan, Siwapon; Jung, Yun Suk; Kim, Hong Koo

doi:10.1038/nnano.2012.107

Cited by 159 publications

(127 citation statements)

References 27 publications

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“…Indeed, graphene has been thoroughly investigated for use as an electron-transparent material, for example, as a sample substrate in transmission electron microscopy, 7,8 as a gate in metal-oxidesemiconductor field-effect transistors with vacuum channels, 9 and as a gate in field-emission electron guns. 10 For these applications, the transparency of graphene for electrons has been investigated.…”

mentioning

confidence: 99%

Transparency of graphene for low-energy electrons measured in a vacuum-triode setup

et al. 2015

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Graphene, being an atomically thin conducting sheet, is a candidate material for gate electrodes in vacuum electronic devices, as it may be traversed by low-energy electrons. The transparency of graphene to electrons with energies between 2 and 40 eV has been measured by using an optimized vacuum-triode setup. The measured graphene transparency equals ∼60% in most of this energy range. Based on these results, nano-patterned sheets of graphene or of related two-dimensional materials are proposed as gate electrodes for ambipolar vacuum devices.

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mentioning

confidence: 99%

Transparency of graphene for low-energy electrons measured in a vacuum-triode setup

et al. 2015

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“…Examples of vacuum silicon nanodevices are gate-insulated channel transistors with a cutoff frequency of 0.46 THz, 36 a value comparable only to graphene-based transistors and almost an order of magnitude higher than that of GaN technology, and vacuumchannel transistors with emission current densities as high as 10 5 A/cm 2 originating from 2D electron gases. 37 Figure 3 shows vertical and planar emitter confi gurations, developed analogously to the metal oxide semiconductor fi eld-effect transistor technology. Nanostructures engineered to allow surface plasmon resonances can be used to electro-optically emit electrons for semiconductorless high-speed micro-and optoelectronic devices.…”

Section: Field Emissionmentioning

confidence: 99%

Electron-emission materials: Advances, applications, and models

Trucchi

Melosh

2017

MRS Bull.

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Electron emission represents the key mechanism enabling the development of devices that have revolutionized modern science and technology. Today, science still relies on advanced electron-emission devices for imaging, electronics, sensing, and high-energy physics. New generations of emission devices are continuously being improved based on innovative materials and the introduction of novel physical concepts. Recent advances are highlighted by emerging low-work-function and low-dimensional materials with unusual electronic and thermal properties. Nanotubes, nanowires, graphene, and electron-emission models are discussed in this issue, as well as original mechanisms, such as the thermoelectronic effect, thermionic emission, and heat trap processes. Advances in electron-emission materials and physics are driving a renaissance in the fi eld, both opening up new applications, such as energy conversion and ultrafast electronics, as well as improving traditional applications in electron imaging and high-energy science. ELECTRON-EMISSION MATERIALS: ADVANCES, APPLICATIONS, AND MODELS 489MRS BULLETIN • VOLUME 42 • JULY 2017 • www.mrs.org/bulletin thermionic, and fi eld electron emission, or combinations of one or more of these. Each particular physical stimulus necessitates cathode materials with physical properties specifi cally engineered for optimal performance. This section will present an overview of the latest results on the development of advanced materials and related applications, categorized by the specifi c type of electron emission. Photoemission and secondary electron emissionPhotomultipliers remain the lowest noise, highest sensitivity, and fastest imaging systems. Used, for instance, in fl uorescence and laser scanning confocal microcopy, they exploit electron emission from a photocathode and, successively, secondary emissions from electron multiplying stages. Photons to be detected induce the emission of electrons from a material, usually a thin layer in transmission mode. The emitted electron can be accelerated in a vacuum tube by an electric fi eld toward an electron multiplier stage composed of a set of dynodes, which are basic components that emit several low-energy electrons (secondary electrons) when one high-energy electron (primary electron) impinges on their surfaces. Figure 2 shows two common photomultiplier confi gurations. The sensitivity of photocathodes depends on the energy of impinging photons. Consequently, it is not possible to defi ne the best possible photoemission material for a wide range of optical wavelengths.III-V semiconductors with a bandgap engineered according to the corresponding photon energy band are the preferred solution for detecting visible and infrared (IR) radiation; these are also characterized by ultrafast response.4 Cesium-coated GaAs operates at wavelengths up to 930 nm, whereas InGaAs extends the IR range up to 1700 nm. Ag-O-Cs materials are also used for visible-IR detection, with a preferred use in the near-IR region due to a higher sensitivity.5 Multi-alkali-b...

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“…They provide a powerful test-bed for mesoscopic physics [3][4][5][6][7] . Electronic nanogaps with gapwidths in the sub-5 nm range are particularly interesting as they are suitable for embedding and probing molecules to investigate electron transport mechanisms and strong light-matter interactions on a molecular-level.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of crack-junctions

2017

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Nanogap electrodes consist of pairs of electrically conducting tips that exhibit nanoscale gaps. They are building blocks for a variety of applications in quantum electronics, nanophotonics, plasmonics, nanopore sequencing, molecular electronics, and molecular sensing. Crack-junctions (CJs) constitute a new class of nanogap electrodes that are formed by controlled fracture of suspended bridge structures fabricated in an electrically conducting thin film under residual tensile stress. Key advantages of the CJ methodology over alternative technologies are that CJs can be fabricated with wafer-scale processes, and that the width of each individual nanogap can be precisely controlled in a range from o 2 to 4100 nm. While the realization of CJs has been demonstrated in initial experiments, the impact of the different design parameters on the resulting CJs has not yet been studied. Here we investigate the influence of design parameters such as the dimensions and shape of the notches, the length of the electrode-bridge and the design of the anchors, on the formation and propagation of cracks and on the resulting features of the CJs. We verify that the design criteria yields accurate prediction of crack formation in electrode-bridges featuring a beam width of 280 nm and beam lengths ranging from 1 to 1.8 μm. We further present design as well as experimental guidelines for the fabrication of CJs and propose an approach to initiate crack formation after release etching of the suspended electrode-bridge, thereby enabling the realization of CJs with pristine electrode surfaces.

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Metal–oxide–semiconductor field-effect transistor with a vacuum channel

Cited by 159 publications

References 27 publications

Transparency of graphene for low-energy electrons measured in a vacuum-triode setup

Transparency of graphene for low-energy electrons measured in a vacuum-triode setup

Electron-emission materials: Advances, applications, and models

Design and fabrication of crack-junctions

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