Metal oxide semiconductor structure using oxygen-terminated diamond

Chicot, Gauthier; Maréchal, Aurélien; Motte, Renaud; Muret, Pierre; Gheeraert, Etienne; Pernot, Julien

doi:10.1063/1.4811668

Cited by 53 publications

(28 citation statements)

References 25 publications

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“…However, the activation energies of boron and phosphorus dopants are about 370 meV and 570 meV, which are too large to be activated at room temperature 16 . A two dimensional hole gas channel which several nanometers below diamond surface indicate that diamond sample hydrogen termination (H-termination) bonds are produced by treating with hydrogen plasma, resulting in a p-type conduction layer and promoting the development of diamond-based devices.…”

Section: Introductionmentioning

confidence: 99%

Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

Wang

Chang

et al. 2017

Sci Rep

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Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evaporation technique, and specific contact resistivity has been measured by transmission line model. The interface between Ir film and hydrogen-terminated single crystal diamond was characterized by transmission electron microscopy and energy dispersive X-ray spectroscopy. Theoretical calculation value of barrier height between Ir film and hydrogen-terminated single crystal diamond was around −1.1 eV. All results indicate that an excellent ohmic contact could be formed between Ir film and hydrogen-terminated single diamond.

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Section: Introductionmentioning

confidence: 99%

Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

Wang

Chang

et al. 2017

Sci Rep

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“…The fabrication of various diamond transistors have been recently demonstrated such as junction field effect transistors (JFETs) [7][8][9], bipolar junction transistors (BJTs) [10] by applying maskless selective growth technique [11], and MOSFETs on hydrogen-terminated diamond surface [12]. However, diamond MOSFETs operating with inversion of the channel has not been fabricated, although MOS capacitors with an oxygen-terminated p-type layer have been demonstrated [13]. To achieve inversion-type MOSFETs, p-n-p or n-p-n diamond structures consisting of two equivalent p-n junctions must be obtained.…”

mentioning

confidence: 99%

Fabrication of diamond lateral p–n junction diodes on (111) substrates

Sato

Iwasaki

Shimizu

et al. 2015

Physica Status Solidi (a)

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Diamond lateral p–n junctions were fabricated on (111) substrates by selective growth of n‐type diamond around a p‐type layer. We investigated the effects of both the step‐flow growth direction of n‐type diamond and the crystal face of the p‐type sidewalls on the structure and electrical properties of the lateral p–n junctions. The direction of the step‐flow growth clearly influenced the morphologies of the p–n junctions. We also found that the crystal faces of the p‐type sidewalls had an effect on the quality of the lateral p–n junctions. The two facing p–n junctions obtained in this study becomes an n–p–n structure, which could be a key structure for metal‐oxide‐semiconductor field‐effect transistors with an inversion channel.

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“…Diamond is an outstanding semiconductor for high-power and high-frequency electronic applications due to the exceptional properties, such as wide bandgap, high breakdown electric field, outstanding thermal conductivity, and high carrier mobility. [1][2][3] Recently, encouraging progress, such as high cut-off frequency, has been achieved in diamond field-effect transistors (FETs) by using two-dimensional hole gas based on the ptype hydrogenated-terminated diamond surface. [4][5][6][7][8][9] Among the diamond FETs, metal-oxidesemiconductor FETs (MOSFETs) have been attracting growing interest because of the higher power handling capability.…”

Section: International Center For Materials Nanoarchitectonics (Mana)mentioning

confidence: 99%

“…It can also be applied to MOS structures based on oxygen-terminated diamond surface doped with boron. 3 When the MOS structure has a large leakage current due to the inhomogeneity of the semiconductor surface, the precise measurement of the accumulation capacitance in C-V has to be carried out at high frequencies. In such a case, the series resistance will affect the capacitance in the C-V measurement.…”

Section: International Center For Materials Nanoarchitectonics (Mana)mentioning

confidence: 99%

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Liao

Liu

Sang

et al. 2015

Applied Physics Letters

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Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al 2 O 3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect.By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed. a)

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Metal oxide semiconductor structure using oxygen-terminated diamond

Cited by 53 publications

References 25 publications

Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

Fabrication of diamond lateral p–n junction diodes on (111) substrates

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

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