Tin oxides are semiconductor
materials currently attracting close attention in electronics, photovoltaics,
gas sensing, and catalysis. Depending on the tin oxidation stateSn(IV),
Sn(II), or intermediatethe corresponding oxide has either
n- or p-type natural conductivity, ascribed to oxygen or metal deficiency
in the lattice. Such crystalline imperfections severely complicate
the task of establishing tin oxidation state, especially at nanoscale.
In spite of the striking differences between SnO2 and SnO
in their most fundamental properties, there have been enduring problems
in identifying the oxide type. These problems were to a great extent
caused by the controversy around the characteristic chemical shift,
that is, the difference in electron binding energy of a certain core
level in an oxide and its parent metal. Using in situ fabricated bare
tin oxide nanoparticles, we have been able to resolve the controversy:
Our photoelectron spectroscopic study on tin oxide nanoparticles shows
that, in contrast to a common opinion of a close chemical shift for
SnO2 and SnO, the shift value for tin(IV) oxide is, in
fact, 3 times larger than that for tin(II) oxide. Moreover, our investigation
of the nanoparticle valence electronic structure clarifies the question
of why previously the identification of oxidation states encountered
problems.