Metal surface oxidation as a general route for 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>p</mml:mi></mml:math>
-type ohmic contacts to 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mo</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Wang, Qian; Shi, Xingqiang

doi:10.1103/physrevb.108.155305

Cited by 4 publications

(1 citation statement)

References 77 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The graphene Dirac point in GR/SIn 2 O was found to be further from the Fermi level, indicating that In 2 OS had more charge transfer when it was in contact with graphene with the S side than that with the O side. There are many reports of similar and other mechanisms to achieve a robust Ohmic contact. − …”

Section: Resultsmentioning

confidence: 99%

Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

Liu,

Yang,

Deng

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Two-dimensional (2D) Janus semiconductor materials have shown significant potential in the fields of electronics and optoelectronics. The problem of interface contact with electrodes is still faced in the preparation of 2D devices based on them. In this work, we study the interfacial properties of the 2D Janus M 2 OS (M = Ga, In) material in contact with graphene by using ab initio density functional calculations. The results show that an n-type quasi-Ohmic contact (Ohmic contact) is formed regardless of whether the graphene electrode is in contact with the O or S surface of Ga 2 OS (In 2 OS). The heterostructures of graphene and M 2 OS have a very strong Fermi level pinning effect at the interface due to the gap states and the interface dipole. The layer spacing almost does not affect the contact behavior, which is very advantageous for the preparation of devices. The robust Ohmic contact behavior makes M 2 OS very competitive in building next-generation nanoelectronic devices.

show abstract

Section: Resultsmentioning

confidence: 99%

Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

Liu,

Yang,

Deng

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

p-n junction from localized doping of metal-WSe2 contact with N2H4, NH4 and BF4 molecules: A first-principles investigation

Mabelet,

Mabiala-Poaty,

Malonda-Boungou

et al. 2024

Physica B: Condensed Matter

View full text Add to dashboard Cite

Ohmic contact mechanism and charge redistribution of MoS₂/M_n+ ₁X_nO₂ heterostructures

Jiang,

Hou,

Zhu

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Several M n+1 X n O2 compounds exhibit work functions higher than those of three-dimensional (3D) metals, enabling the formation of Ohmic contact heterostructures with MoS2, which enhances the catalytic activity of MoS2 for the hydrogen evolution reaction. However, the Schottky barrier height in these Ohmic contact heterostructures does not adhere to the Schottky-Mott limit, leaving the Ohmic contact mechanism between MoS2 and M n+1 X n O2 unclear and hindering further investigations into these heterostructures. In this study, we investigate 22 MoS2/M n+1 X n O2 heterostructures using the unfolding method. Among these, the eight M n+1 X n O2 compounds—Cr2CO2, Mo2CO2, V2CO2, W2CO2, Cr2NO2, V2NO2, Ti3C2O2 and V4C3O2—form p-type Ohmic contacts with MoS2. In contrast, the twelve compounds—Hf2CO2, Nb2CO2, Ta2CO2, Ti2CO2, Zr2CO2, Mo2NO2, Ti2NO2, Ti3N2O2, Zr3C2O2, Nb4C3O2, Ta4C3O2 and Ti4N3O2—create p-type Schottky contacts, while Hf2NO2 and Zr2NO2 form n-type Schottky contacts with MoS2. In the Ohmic contact heterostructures, out-of-plane orbital states hybridize to form a splitting band, allowing the highest valence band of MoS2 to cross the Fermi level and achieve hole doping. This splitting band not only results in a Schottky barrier height that does not conform to the Schottky-Mott limit but also redistributes charge density. Notably, the heterostructures formed by Cr2CO2, Mo2CO2, V2CO2, W2CO2, Cr2NO2, V2NO2, V4C3O2, and MoS2 exhibit charge polarity distribution, whereas MoS2/Ti3C2O2 does not demonstrate charge polarity distribution.

show abstract

Metal surface oxidation as a general route for p -type ohmic contacts to MoS2

Cited by 4 publications

References 77 publications

Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

p-n junction from localized doping of metal-WSe2 contact with N2H4, NH4 and BF4 molecules: A first-principles investigation

Ohmic contact mechanism and charge redistribution of MoS₂/M_n+ ₁X_nO₂ heterostructures

Contact Info

Product

Resources

About

Metal surface oxidation as a general route for p -type ohmic contacts to MoS2

Cited by 4 publications

References 77 publications

Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

p-n junction from localized doping of metal-WSe2 contact with N2H4, NH4 and BF4 molecules: A first-principles investigation

Ohmic contact mechanism and charge redistribution of MoS2/Mn+ 1XnO2 heterostructures

Contact Info

Product

Resources

About

Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

Ohmic contact mechanism and charge redistribution of MoS₂/M_n+ ₁X_nO₂ heterostructures