2014
DOI: 10.1117/12.2046782
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Metal1 patterning study for random-logic applications with 193i, using calibrated OPC for litho and etch

Abstract: A Metal1-layer (M1) patterning study is conducted on 20nm node (N20) for random-logic applications. We quantified the printability performance on our test vehicle for N20, corresponding to Poly/M1 pitches of 90/64nm, and with a selected minimum M1 gap size of 70nm. The Metal1 layer is patterned with 193nm immersion lithography (193i) using Negative Tone Developer (NTD) resist, and a double-patterning Litho-Etch-Litho-Etch (LELE) process. Our study is based on Logic test blocks that we OPCed with a combination … Show more

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Cited by 5 publications
(2 citation statements)
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“…The light source wavelength is 193 nm, and the numerical aperture (NA) is 1.35. The process window OPC is accessible in lithography process [16].…”
Section: Zigzag Bl Opc Evaluationmentioning
confidence: 99%
“…The light source wavelength is 193 nm, and the numerical aperture (NA) is 1.35. The process window OPC is accessible in lithography process [16].…”
Section: Zigzag Bl Opc Evaluationmentioning
confidence: 99%
“…In the case of the trench printing process we use in this paper as an example, the litho-etch bias was observed to depend primarily on the litho CD itself as well as on the trench pitch. 7) We selected our calibration structures accordingly (i.e., structures with varying trench CD and pitch) and obtained a quite good model from this choice.…”
Section: Etch Modelmentioning
confidence: 99%