Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation

Shih, Chun‐Hsing; Huang, M.C.Y.; Tsai, Jr-Jie; Chen, Yu-Hsuan; Wu, Wen−Fa

doi:10.1016/j.mssp.2016.11.010

Cited by 2 publications

(1 citation statement)

References 23 publications

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“…This is detrimental for ferroelectric-based technologies applied in logic devices requiring stable and superior remanent polarization (Pr) values. On the other hand, microwave annealing (MWA) [ 19 , 20 , 21 , 22 , 23 ] is considered an alternative annealing technique with the advantage of mitigating the annealing-induced defects.…”

Section: Introductionmentioning

confidence: 99%

Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing

Zhao

Yan

et al. 2022

Nanomaterials

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In the doped hafnia(HfO2)-based films, crystallization annealing is indispensable in forming ferroelectric phases. In this paper, we investigate the annealing effects of TiN/Hf0.5Zr0.5O2/TiN metal-ferroelectric-metal (MFM) capacitors by comparing microwave annealing (MWA) and rapid thermal annealing (RTA) at the same wafer temperature of 500 °C. The twofold remanent polarization (2Pr) of the MWA device is 63 µC/cm2, surpassing that of the RTA device (40 µC/cm2). Furthermore, the wake-up effect is substantially inhibited in the MWA device. The orthorhombic crystalline phase is observed in the annealed HZO films in the MWA and RTA devices, with a reduced TiN and HZO interdiffusion in MWA devices. Moreover, the MFM capacitors subjected to MWA treatment exhibit a lower leakage current, indicating a decreased defect density. This investigation shows the potential of MWA for application in ferroelectric technology due to the improvement in remanent polarization, wake-up effect, and leakage current.

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Section: Introductionmentioning

confidence: 99%

Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing

Zhao

Yan

et al. 2022

Nanomaterials

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Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications

Teng

Chen²,

Tsai³

et al. 2020

Crystals

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This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on source-side injection are considered for properly operating Schottky barrier cells in low-power or high-efficiency applications. A gate voltage of 5 to 9 V with a drain voltage of 1 to 3 V was employed to program the Schottky barrier cells. Both the non-planar double-gate gate structure and scaled dielectric layers effectively improve the source-side programming. When the gate voltage of 5 V was operated, there were roughly two orders of magnitude greater injected gate currents observed in the ONO-scaled double-gate cells. Five successive programming-trapping iterations were employed to consider the coupling of trapped charges and Schottky barriers, examining the differences in physical mechanisms between different design options. The gate structures, dielectric layers, and gate/drain voltages are key factors in designing transverse scaled Schottky barrier charge-trapping cells for low-power and high-efficiency applications.

show abstract

Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation

Cited by 2 publications

References 23 publications

Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing

Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing

Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications

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