Metallurgy of Ohmic contacts to InP

We report on silicon fab-compatible non-gold ohmic contacts to n-InP and p-InGaAs using Ti/W and Pd/Ge/W based metallization schemes where gold is replaced by aluminum as a thick probe layer. Specific contact resistivity of <1 × 10−7 Ω cm2 and < 2 × 10−6 Ω cm2 is obtained on n-InP and p-InGaAs after 450 °C anneal using circular transmission line model (CTLM) patterns. In addition, by varying the atomic ratio of Pd/Ge we, propose a common metal contact to both group III–V epitaxial layers with a specific contact resistivity <1 × 10−5 Ω cm2.

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Metallurgy of Ohmic contacts to InP

Cited by 4 publications

References 129 publications

Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Influence of electrical characteristics on the sensitivity of p-InP-based pseudo-Schottky diodes for NO2 monitoring in atmosphere

Sputtered full-wafer backside metallization for n-type InP: effect of temperature annealing

Silicon fab-compatible contacts to n-InP and p-InGaAs for photonic applications

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