Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization

Tsai, Mei‐Hui; Sun, Shuo; Chiu, Hsin‐Tien; Tsai, Chuang-Chuang; Chuang, Shiow‐Huey

doi:10.1063/1.114983

Cited by 81 publications

(52 citation statements)

References 13 publications

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“…[7] These results encouraged us to carry out a more detailed examination of the tantalum guanidinato/amido/imido complex system and the impact of substituent variations at different ligand sites on the chemical and thermal properties of the resulting complexes. Table 1 gives a summary of all complexes synthesized and characterized in this paper.…”

Section: Introductionmentioning

confidence: 98%

Mixed Amido/Imido/Guanidinato Complexes of Tantalum: Effects of Ligand Substitution on Thermal Properties

et al. 2006

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Section: Introductionmentioning

confidence: 98%

Mixed Amido/Imido/Guanidinato Complexes of Tantalum: Effects of Ligand Substitution on Thermal Properties

et al. 2006

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“…There have been several techniques applied for the fabrication of TaN thin films, such as reactive magnetron sputtering [5,6], chemical vapor deposition (CVD) [7], low-energy nitrogen implantation [8] and metalorganic chemical vapour deposition (MOCVD) [9]. Among these techniques, reactive magnetron sputtering is the primary candidate for application in microelectronic devices and hard coatings.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique

Niu

et al. 2007

Applied Surface Science

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“…8,9 Among the other available four-coordinate iminotris(amido)tantalum precursors (R 1 -N = Ta(NR 2 R 3 ) 3 ) shown in Fig. 1, TBTEMT has been shown to exhibit the highest volatility albeit with a slightly lower thermal stability than TBTDET, 10 an ALD TaN source which has been widely reported on in the literature.…”

Section: Methodsmentioning

confidence: 99%

In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta_1-xAl_xN_yFilms for Cu Diffusion Barrier Applications

Consiglio

Dey

et al. 2016

ECS J. Solid State Sci. Technol.

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films with x = 0.21 to 0.88 were deposited by atomic layer deposition (ALD) and evaluated for Cu diffusion barrier effectiveness compared to physical vapor deposition (PVD) grown TaN. Cu diffusion barrier effectiveness was investigated using in-situ ramp anneal synchrotron X-ray diffraction (XRD) on Cu/1.8 nm barrier/Si stacks. A Kissinger-like analysis was used to assess the kinetics of Cu 3 Si formation and determine the effective activation energy (E a ) for Cu silicidation. Compared to the stack with a PVD TaN barrier, the stacks with the ALD films exhibited a higher crystallization temperature (T c ) for Cu silicidation. The E a values of Cu 3 Si formation for stacks with the ALD films were close to the reported value for grain boundary diffusion of Cu whereas the E a of Cu 3 Si formation for the stack with PVD TaN is closer to the reported value for lattice diffusion. For 3 nm films, grazing incidence in-plane XRD showed evidence of nanocrystallites in an amorphous matrix with broad peaks corresponding to high density cubic phase for the ALD grown films and lower density hexagonal phase for the PVD grown film further elucidating the difference in initial failure mechanisms due to differences in barrier crystallinity and associated phase. The continuous scaling of Cu interconnects for sub-10 nm technology nodes calls for development of ultrathin and conformal Cu diffusion barriers. Due to its ability to conformally deposit films with nanoscale thickness control, atomic layer deposition (ALD) is an attractive method for depositing refractory metal nitride diffusion barrier layers, as opposed to a line-of-sight technique such as physical vapor deposition (PVD).1 In this regard, we have previously demonstrated extendability of Cu fill (with Ru seed layer) below 25 nm linewidth (200 nm height) when PVD TaN is replaced with ALD TaN.2 In 40 nm Cu dual damascene structures with 3 nm barrier layers, ALD TaN has also been shown to reduce via resistance by ∼28% compared to PVD TaN in spite of 20x lower blanket resistivity for PVD TaN.3 In order to further improve ALD grown TaN and minimize Cu diffusion through these ultrathin barrier films, it is desirable to avoid forming polycrystalline films with inherent grain boundary diffusion pathways. Accordingly, alloying refractory transition metal nitrides with a third element (as for example Al) may offer a promising method for maintaining metastable amorphous films by interrupting the typical polycrystalline phase formation. 4,5 In this regard, ALD of the ternary compound Ta 1-x Al x N y is of potential interest for Cu barrier applications. Presently there is scarce literature on ALD of this ternary compound which warrants further investigation of film growth and barrier properties. In a recent review of ALD processes for metallization by Li,6 only one publication of ALD of TaAlN-based compounds was reported. In this study by Alén et al.7 Ta-halide precursors were used with trimethylaluminum (TMA) as a reducing agent to deposit Ta(Al)N(C) films and the barrier properties...

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Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization

Abstract: Diffusion and oxidation of plasma-enhanced chemical-vapor-deposition silicon nitride and underlying metals Low temperature plasma-promoted chemical vapor deposition of tantalum from tantalum pentabromide for copper metallization

Cited by 81 publications

References 13 publications

Mixed Amido/Imido/Guanidinato Complexes of Tantalum: Effects of Ligand Substitution on Thermal Properties

Mixed Amido/Imido/Guanidinato Complexes of Tantalum: Effects of Ligand Substitution on Thermal Properties

Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique

In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta_1-xAl_xN_yFilms for Cu Diffusion Barrier Applications

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Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization

Abstract: Diffusion and oxidation of plasma-enhanced chemical-vapor-deposition silicon nitride and underlying metals Low temperature plasma-promoted chemical vapor deposition of tantalum from tantalum pentabromide for copper metallization

Cited by 81 publications

References 13 publications

Mixed Amido/Imido/Guanidinato Complexes of Tantalum: Effects of Ligand Substitution on Thermal Properties

Mixed Amido/Imido/Guanidinato Complexes of Tantalum: Effects of Ligand Substitution on Thermal Properties

Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique

In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta1-xAlxNyFilms for Cu Diffusion Barrier Applications

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Product

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In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta_1-xAl_xN_yFilms for Cu Diffusion Barrier Applications