Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

Abstract

Using one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Designing transition metal-based porous architectures for supercapacitor electrodes: a review

“…Its broad application in the fabrication of low-dimensional substances, including TM compounds, is attributed to the fact that its constituents and interfaces are exceedingly versatile. 108 As shown in Fig. 4(a) , Kang et al 4 used the metal–organic compound chemical vapor deposition strategy to prepare MoS 2 with a size of 10 cm on an SiO 2 /Si substrate; however, the low reactant flux resulted in the slow growth rate of the product.…”

Indium Nitride Nanowires: Low Redox Potential Anodes for Lithium‐Ion Batteries

“…[ 8 ] Moreover, InN has a narrow bandgap (0.69 eV) with good electron transfer properties. [ 9 ] Therefore, InN can show fasting charging without Li dendrite due to the inhibited Li deposition, which could be applicable for next‐generation HED‐LIBs. However, its inherent volume change in the conversion and alloying/dealloying process with Li‐ions may cause pulverization of InN particles, collapse of electrode integrity, destruction of solid electrolyte interphase (SEI), and consumption of active Li‐ions.…”

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

“…Some researchers have relied on empirical evidence of a 1.9 eV band gap in InN to support their claims. However, it is widely accepted that the actual value of the band gap of InN is approximately 0.69 eV [17][18][19]. Therefore, advancing the growth kinetics of InGaN is of the utmost importance as it has the potential to enhance the quality of InGaN films by optimizing their growth factors.…”