Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride

“…In our research, NF 3 is the nitrogen source for growing InGaAsN by metalorganic chemical vapor deposition [19]. After annealing in NF 3 , we have recorded a red shift of 5-25 nm in the PL spectrum.…”