Metalorganic molecular beam epitaxy growth and etching of GaSb on flat and high-index surfaces using trisdimethylaminoantimony

Yamamoto, Kazuhiko; Asahi, H.; Hayashi, Toshihiko; Asami, K.; Gonda, S.

doi:10.1016/0022-0248(95)01065-3

Cited by 14 publications

(3 citation statements)

References 17 publications

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“…121 The maximum growth rate of GaSb is observed at a substrate temperature of 500°C. Recently, MOMBE growth and etching of GaSb on flat and high index surfaces using TDMASb, as well as elemental antimony Sb 4 , and TEGa have been reported by Yamamoto et al 122 When only TDMASb is supplied, GaSb surfaces are etched for all misoriented substrates and native oxide could be removed at 540°C. On the other hand, when TEGa is simultaneous supplied in addition to TDMASb, the surface reaction is changed from etching to growth on the nϭ3,4,5 surfaces.…”

Section: Metal-organic Molecular Beam Epitaxymentioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 m. The III-V ternaries and quaternaries ͑AlGaIn͒͑AsSb͒ lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication.

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Section: Metal-organic Molecular Beam Epitaxymentioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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“…With MOVPE, severe pre-reactions have been reported between TDMASb and group-III metalorganic sources in the gas phase [10]. In contrast, the pre-reaction in the gas phase is negligible with MOMBE, and GaSb can be grown using TDMASb with no prereactions [11]. However, to our knowledge, there have been no reports on the reduction of C incorporation in the film or the growth of InGaAsSb quaternary alloy using TDMASb as a source.…”

Section: Introductionmentioning

confidence: 94%

Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony

Mitsuhara¹,

Sato²,

Yamamoto³

et al. 2009

Journal of Crystal Growth

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“…Volatile antimony precursors play an important role in the production of Sb-based semiconductor thin layers through chemical vapor deposition (CVD). Typical materials fabricated by CVD processes include, e.g., the binaries AlSb, GaSb, and InSb; − antimony chalcogenides such as Sb 2 Se 3 and Sb 2 Te 3 ; , and the phase-change material germanium–antimony–telluride, Ge 2 Sb 2 Te 5 (= GST). − One of the most useful volatile antimony(III) precursors for CVD applications is the readily available tris(dimethylamino)antimony(III), Sb(NMe 2 ) 3 (= TDMASb). ,− In the course of an ongoing project directed toward the design of new precursors for GST, we reasoned that the replacement of the dimethylamino groups by the somewhat smaller cyclic aziridinyl unit cyclo -NC 2 H 4 could lead to potentially useful additions to the current library of volatile antimony(III) precursors.…”

mentioning

confidence: 99%

Synthesis and Crystal Structures of the First Antimony(III) Aziridinides

et al. 2017

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The first antimony(III) aziridinyl derivatives are reported. Treatment of anhydrous SbCl with N-lithioaziridine Li(Azn) (Azn = NCH) afforded the structurally unique heterobimetallic lithium/antimony(III) amide complex [LiSb(μ-Cl)(μ-Azn)(THF)] (1). Homoleptic Sb(Azn) (2) has become available for the first time through an amide group exchange reaction between Sb(NMe) and 3 equiv of aziridine. The low-melting Sb(Azn) exhibits a "weak dimer" structure in the crystal.

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Metalorganic molecular beam epitaxy growth and etching of GaSb on flat and high-index surfaces using trisdimethylaminoantimony

Cited by 14 publications

References 17 publications

The physics and technology of gallium antimonide: An emerging optoelectronic material

The physics and technology of gallium antimonide: An emerging optoelectronic material

Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony

Synthesis and Crystal Structures of the First Antimony(III) Aziridinides

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