Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

Supplie, Oliver; Romanyuk, O.; Koppka, Christian; Steidl, Matthias; Nägelein, Andreas; Paszuk, Agnieszka; Winterfeld, Lars; Dobrich, Anja; Kleinschmidt, Peter; Runge, Erich; Hannappel, Thomas

doi:10.1016/j.pcrysgrow.2018.07.002

Cited by 52 publications

(42 citation statements)

References 471 publications

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“…The etched back side was passivated with an Al 2 O 3 /SiN x stack. Details of the following gallium phosphide (GaP) nucleation process are presented elsewhere and are based on common two‐step nucleation strategies . Compared with our previous GaInP/GaAs/Si cell, the nucleation process was slightly modified leading to a significant reduction in defect density (stacking faults, stacking fault pyramids, and threading dislocations).…”

Section: Methodsmentioning

confidence: 99%

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

et al. 2019

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III-V on Si multijunction solar cells exceede the efficiency limit of Si singlejunction devices but are often challenged by expensive layer transfer techniques. Here, progress in the development of direct epitaxial growth for GaInP/GaAs/Si triple-junction solar cells is reported. III-V absorbers with a total thickness of 4.9 μm are grown onto a Si bottom cell using metal organic vapor phase epitaxy. A new record efficiency of 22.3% under AM1.5g conditions is reached herein, outperforming the previous value of 19.7%. This improvement is possible through better nucleation conditions for the first GaP layer on Si and consequently the reduction of threading dislocations within the III-V absorbers from 1.4 Â 10 8 to 2.2 Â 10 7 cm À2 . Further efficiency improvements toward 30% require even lower threading dislocation densities in the order of 1 Â 10 6 cm À2 , better light trapping in the Si bottom cell, and a reduction of parasitic absorption within the GaAs y P 1-y graded buffer.

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Section: Methodsmentioning

confidence: 99%

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

et al. 2019

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“…In order to reduce the defect density in the GaP layers, the Si(001) surface was prepared with wellordered, double-layer steps and single-domain (SD) terraces with (1 × 2) reconstruction. 2 The GaP buffer layers were nucleated by alternating pulses of tertiarybutylphosphine (TBP) and triethylgallium (TEGa) at 420 C at a pressure of 100 mbar. The first pulse was TBP.…”

Section: Methodsmentioning

confidence: 99%

“…The Si wafer surface was deoxidized at a temperature of 1000 °C and a H 2 pressure of 950 mbar. In order to reduce the defect density in the GaP layers, the Si(001) surface was prepared with well‐ordered, double‐layer steps and single‐domain (SD) terraces with (1 × 2) reconstruction 2 …”

Section: Methodsmentioning

confidence: 99%

“…In particular, two‐domain Si(001) surfaces result in the formation of antiphase domain (APD) boundaries in the GaP layer. Preparation of a single‐domain Si(001) surface is essential for subsequent low‐defect heteroepitaxy of GaP on Si(001): double‐layer steps at the Si(001) surface are required in order to suppress APDs in subsequently grown III‐V epilayers 2 …”

Section: Introductionmentioning

confidence: 99%

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Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

Romanyuk

Supplie

Paszuk

et al. 2020

Surface & Interface Analysis

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We present a study of buried GaP/Si(001) heterointerfaces by hard X‐ray photoelectron spectroscopy. Well‐defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.

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“…Pseudomorphic III-V transition epilayers can, in general, facilitate the NW nucleation and are particularly important for vapor liquid solid growth [12][13][14][15]; for a recent review see Ref. [16]. Such planar buffer layers were implemented successfully for various III-V nanowire based structures such as GaAs [12,17], InP [18], InAs [19] and GaN [20,21].…”

Section: Introductionmentioning

confidence: 99%

Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)

Winterfeld

Koppka

Abou‐Ras

et al. 2018

Phys. Rev. Materials

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Rotational twins are fundamental defects in III-V epitaxy, in particular for the growth on nonpolar (111) surfaces. Based on density functional theory (DFT) calculations, we develop a general model for III-V nucleation on vicinal non-polar (111)-oriented substrates and focus on the important differences in the atomic step configuration of different miscut directions. We verify this model by a relevant materials system when growing GaP epilayers on As-terminated Si(111): Scanning tunneling microscopy measurements reveal the formation of straight double bilayer steps after Aspassivation of the Si(111) surface, which persist after III-V growth, as we display when measuring the buried heterointerface with cross-sectional high-resolution transmission electron microscopy. A twin amount in the GaP epilayers is observed in dependence on the misorientation and our nucleation model explains the underlying mechanisms: The number of back-bonds at the step edges determines the nucleation site. Accordingly, the substrate misorientation towards [112] yields twin-suppression, which is in full agreement with experiment. Finally, we use DFT input for Kinetic Monte Carlo calculations to explain the formation of GaP rotational twins on Si(111):As in order to explain their volume fraction observed by high resolution X-ray diffraction measurements. We thus derive a complete picture of the formation and suppression of rotational twins relevant for low-defect III-V-on-Si integration.

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Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

Cited by 52 publications

References 471 publications

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)

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