Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

Lange, M.; Cavus, A.; Monier, C.; Sandhu, R.; Block, Thomas; Gambin, Vincent; Sawdai, D.; Gutierrez-Aitken, A.L.

doi:10.1116/1.1752917

Cited by 9 publications

(1 citation statement)

References 11 publications

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“…8,9 Linear composition grade was employed with no overshoot to achieve a 6.00 Å lattice parameter on InP. The initial work in the development of 6.00 Å GBL included buffer thicknesses of 1.2-1.5 m and the growth conditions were optimized for surface morphology, strain relief, threading dislocation density, and device performance.…”

Section: Introductionmentioning

confidence: 99%

Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices

Cavus

Sandhu

Monier

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistorsComparison of As-and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications In x Al 1−x As/ In x Ga 1−x As heterojunction bipolar transistors ͑HBTs͒ with lattice parameters ranging from 6.00 to 6.058 Å employing the use of narrow band gap In x Ga 1−x As base epitaxial layers toward InAs ͑0.86Ͻ X ln Ͻ 1͒ allows for the development of high speed digital and mixed signal circuits to perform at half the power required for conventional group III-V-based HBT device technologies. However, one of the key challenges inhibiting the development of low power narrow band gap HBT device circuits is the absence of semi-insulating ͑SI͒ substrates with lattice parameters towards 6.058 Å. Therefore, a metamorphic In x Al 1−x As ͑0.52Ͻ X ln Ͻ 0.86͒ graded buffer layer ͑GBL͒ grown on InP by molecular beam epitaxy was investigated as a means to enable a SI template with a lattice parameter of 6.00 Å. The metamorphic In x Al 1−x As GBL thickness is desired to be less than a micron in order for this approach to be compatible with the aggressive design rules of high-density transistor circuits. In this study, In 0.86 Al 0.14 As/ In 0.86 Ga 0.14 As double heterojunction bipolar transistor devices were grown on 0.90, 0.45, and 0.23 m thick In x Al 1−x As GBLs to assess the role of buffer layer thickness on both defect formation and device performance. The material characterization results for the 0.90 and 0.45 m thick buffer layers exhibited a crosshatch pattern with a surface rms roughness of 4 nm and threading dislocation densities of ϳ10 6 cm −2 . Excellent dc and rf characteristics from metamorphic HBT devices with submicron emitter widths were observed with low turn-on voltage of 0.45 V, high current gain, low reverse junction leakage ͑Ͻ1 A͒, and rf peak performance in the vicinity of 150 GHz. Finally, preliminary circuits ͑dividers and delay chains͒ have been designed, fabricated, and demonstrated with the 6.00 Å HBT technology.

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Section: Introductionmentioning

confidence: 99%

Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices

Cavus

Sandhu

Monier

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Photoconductivity decay in metamorphic InAsP∕InGaAs double heterostructures grown on InAsyP1−y compositionally step-graded buffers

Lin

Hudait

Johnston

et al. 2005

Applied Physics Letters

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Lattice-mismatched InAs0.32P0.68∕In0.68Ga0.32As∕InAs0.32P0.68 double heterostructures (DH) were grown on compositionally graded InAsyP1−y∕InP substrates by solid-source molecular-beam epitaxy (MBE) out to a misfit of ∼1%. The kinetics of carrier recombination were investigated in the nearly totally relaxed MBE-grown DH structures using photoconductivity decay (PCD) measurements. High minority carrier lifetimes of 4–5μs close to the radiation limit were measured, indicating the ability of MBE-grown InAsyP1−y buffers in achieving high-electronic-quality, low-band-gap mismatched InGaAs layers. Analysis suggests that very low interface recombination velocities are achieved. A photogenerated carrier diffusion model is presented to explain the initial nonlinear decays observed in PCD data for these heterostructures.

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Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates

Andre

Wilt

Pitera

et al. 2005

Journal of Applied Physics

126

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Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+∕p diode compared with a p+∕n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge∕Si1−xGex∕Si (SiGe) substrates with a TDD of 1×106cm−2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current–voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+∕p solar cells compared with GaAs p+∕n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+∕p GaAs solar cell grown on a SiGe substrate with a TDD of ∼1×106cm−2 was ∼880mV which was significantly lower than the ∼980mV measured for a p+∕n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+∕n polarity GaAs junctions demonstrate superior dislocation tolerance than n+∕p configured GaAs junctions, which is important for optimization of lattice-mismatched III–V devices.

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Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

Cited by 9 publications

References 11 publications

Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices

Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices

Photoconductivity decay in metamorphic InAsP∕InGaAs double heterostructures grown on InAsyP1−y compositionally step-graded buffers

Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates

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