Wafer bonding and hydrogen implantation exfoliation techniques have been used to fabricate a thin InP template layer on GaAs with intermediate silicon nitride bonding layers. This template layer was used to directly compare subsequent metal organic vapor phase epitaxial growth of InGaAs∕InAlAs quantum-well structures on these wafer-bonded templates to growth on a standard InP substrate. Chemical mechanical polishing of the bonded structure and companion InP substrates was assessed. No effects from the coefficient of thermal mismatch are detected up to the growth temperature, and compositionally equivalent structures are grown on the wafer-bonded InP template and the bare InP substrate. However, after growth dislocation, loops can be identified in the InP template layer due to the ion implantation step. These defects incur a slight mosaic tilt but do not yield any crystalline defects in the epitaxial structure. Low-temperature photoluminescence measurements of the InGaAs grown on the template structure and the InP substrate exhibit near-band-edge luminescence on the same order; this indicates that ion implantation and exfoliation is a viable technique for the integration of III-V materials.

No abstract

Articles you may be interested inImpact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon AIP Advances 5, 057149 (2015); 10.1063/1.4921757 Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy J. Vac. Sci. Technol. B 31, 041203 (2013); 10.1116/1.4812793 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffersStrain relaxation properties of InAs y P 1 − y metamorphic materials grown on InP substrates Impact of arsenic species ( As 2 ∕ As 4 ) on the relaxation and morphology of step-graded In As x P 1 − x on InP substrates J.In this study, metamorphic compositionally graded In x Al 1−x As layers grown on InP by molecular beam epitaxy with a final indium mole fraction of x = 1.0 ͑6.05 Å͒ are investigated. To examine the effects of relative growth temperature on strain relaxation and surface morphology at different stages of the buffer layer growth, a series of samples was produced with the indium mole fraction graded from x = 0.52 to x = 0.64, 0.79, and 1.0 with a constant grading rate. The high misfit dislocation velocity in this system allows the grading to be accomplished with a thin layer ͑ϳ1 m͒, complete strain relaxation and low threading dislocation densities. The evolution of the strain relaxation, threading dislocation density, and surface morphology were evaluated by triple axis x-ray diffraction, transmission electron microscopy (TEM), etch pit density (EPD), and atomic force microscopy. Higher growth temperature led to threading densities as low as 10 6 cm −2 , as measured by plan-view TEM and EPD. The final surface roughness was controlled by the growth temperature of a constant composition cap layer.

No abstract