Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL

Boucart, J.; Starck, C.; Gaborit, F.; Plais, A.; Bouché, Nicolas; Derouin, E.; Remy, J.C.; Bonnet-Gamard, J.; Goldstein, Leon J.; Fortin, C.; Carpentier, D.; Salet, P.; Brillouet, F.; Jacquet, J.

doi:10.1109/2944.788414

Cited by 101 publications

(29 citation statements)

References 20 publications

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“…Simulations indicate that the coupling loss is very sensitive to the bonding layer thickness and the wire waveguide width. Also, a Secondary Ion Mass Spectroscopy analysis on test samples indicates that the true tunnel-junction doping level is 8x10 18 cm -3 rather than is 2x10 19 cm -3…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

“…This cannot be done for a thin-film laser structure, as this would cause excessive internal absorption losses. Therefore, we implemented a tunnel junction with low optical loss [18] in combination with another n-type contact, instead of low-bandgap p-type contact layer. The laser resonance is evanescently coupled to the underlying SOI waveguide, which is vertically aligned with the edge of microdisk.…”

Section: Microdisk Laser Structure and Fabricationmentioning

confidence: 99%

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Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

Campenhout¹,

Romeo²,

Régrény³

et al. 2007

Opt. Express

478

284

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A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuouswave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI). The InP-based microdisk has a diameter of 7.5 μm and a thickness of 1 μm. A tunnel junction was incorporated to efficiently contact the p-side of the pn-junction. The laser emits at 1.6 μm, with a threshold current as low as 0.5 mA under continuous-wave operation at room temperature, and a threshold voltage of 1.65 V. The SOI-coupled laser slope efficiency was estimated to be 30 μW/mA, with a maximum unidirectional output power of 10 μW.

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Section: Measurement Results and Discussionmentioning

confidence: 99%

Section: Microdisk Laser Structure and Fabricationmentioning

confidence: 99%

Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

Campenhout¹,

Romeo²,

Régrény³

et al. 2007

Opt. Express

478

284

View full text Add to dashboard Cite

show abstract

“…However, since the conductivity of p-type doped II-VI DBRs is very low, either an intracavity contact on the p-side has to be used or a reversed-biased tunnel junction [151] has to be implemented. In the latter case two n-type doped DBRs could be used for current injection.…”

Section: Increasing Energymentioning

confidence: 99%

Properties and prospects of blue–green emitting II–VI‐based monolithic microcavities

Sebald

Kruse

Wiersig

2009

Physica Status Solidi (b)

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1 Introduction In the last years new ways to manipulate the light-matter interaction were found by modifying photonic components which confine light on the wavelength scale by means of semiconductor microcavities (MCs) [1]. The modified optical density of states produced by photonic structuring allows emission and absorption rates to be enhanced or suppressed. This is known as the Purcell effect which can be used to control the spontaneous emission [2]. Semiconductor MCs appear to a be highly attractive systems for the realization of a new generation of optoelectronic devices, polariton devices, optical switches and spin-memory elements. Several types of solid state MCs [1], including micropillars [3,4], microdisks [5,6] and photonic crystals [7,8], offer very small mode volumes V in combination with high quality factors Q. These factors describe the ability of the cavity to confine the light.

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“…This tunnel junction consists of a reverse-biased Q1.2 p++/n++-junction with layer thicknesses of only 20nm and doping levels above 10 19 cm -3 . This type of tunnel junction can have low absorption losses in combination with a low electrical resistivity [2]. A second important aspect is the position of the metal contacts.…”

Section: Design and Fabrication Aspectsmentioning

confidence: 99%

Electrically Injected InGaAsP Microdisk Lasers Heterogeneously Integrated on a Si-Wafer

Campenhout

Rojo-Romeo²,

Thourhout³

2006

2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest.

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Abstract-We report on electrically pumped lasing in microdisk cavities etched in a thin InP-based membrane directly bonded on top of a silicon wafer. The microdisks were planarized by means of a benzocyclobutene (BCB) layer, into which contact windows were etched to perform current injection. The top metal contact is placed only in the centre of the disk, whereas the bottom contacting is done by means of a thin lateral InP contacting layer. In order to avoid large optical absorption in ptype contact layers, a tunnel junction was used in combination with two n-type contacts. Lasing was observed in pulsed regime at room temperature with current thresholds in the range 0.55 -1.1mA, for microdisks with a diameter in the range 6 -9µm.

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Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL

Cited by 101 publications

References 20 publications

Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

Properties and prospects of blue–green emitting II–VI‐based monolithic microcavities

Electrically Injected InGaAsP Microdisk Lasers Heterogeneously Integrated on a Si-Wafer

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