Three kinds of novel indium oxide (In 2 O 3 ) nanostructures, namely, nanorods, nanoflowers and nanowhiskers were synthesized on silicon substrate via a simple vapor-phase transport method under atmospheric pressure. The In 2 O 3 nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectrometer (EDS) spectrum. The Raman spectra of these nanostructures showed four sharp scattering peaks centered at 308, 365, 522, and 628 cm -1 , whose position and intensity were characteristic of standard Raman spectra for In 2 O 3 . The Room-temperature photoluminescence (PL) spectra showed visible emissions centered around 576, 592, and 624 nm. Field emission measurements demonstrated that the nanoflowers possessed the best performance with a turn-on field of 3.54 V/µm and a threshold field of 9.83 V/µm. And the field enhancement factors of these nanostructures are high enough for the application of field emission display devices.