Metastable monoclinic [110] layered perovskite Dy₂Ti₂O₇ thin films for ferroelectric applications

Abstract

Using the Combinatorial Substrate Epitaxy (CSE) approach, we report the stabilization of Dy2Ti2O7 epitaxial monoclinic, layered-perovskite phase Dy2Ti2O7 thin films.

Epitaxial Phase Stability of SrMnO3–x Films on Polycrystalline Perovskite Substrates

“…These results agree with our previous study of similar materials, for both 3C-CaMnO 3 on 4H-SrMnO 3 and 4H-SrMnO 3 on 3C-SrTiO 3 , deposited at 850 °C . Furthermore, for many other film–substrate pairs that are readily described as eutactic structures, the eutactic orientation relationship is overwhelmingly the main epitaxial OR, with angular deviations less than 5°. − , The prevalence of the eutactic relationship over all other ORs suggests that the alignment of eutactic planes and directions is strongly energetically preferred. This is reinforced here, even with significant changes in oxygen content and deposition conditions.…”

“…Instead, we rely on chemical intuition based on empirical evidence conventionally obtained by low-throughput experimentation. Combinatorial substrate epitaxy (CSE) is a high-throughput epitaxial deposition technique that can accelerate our understanding of epitaxial phase competition and development of new materials; it can be used to determine phase formation and orientation relationships (ORs) between film and substrate grains over all of orientation space within a single deposition. − CSE has been used many times before to quickly reveal the epitaxial ORs of metastable phases on novel substrates and orientations. ,,, Two of the more general conclusions from those investigations are (1) grain-over-grain epitaxy is achievable on nearly all orientations of substrates and (2) only a few low-energy ORs, such as the alignment of close-packed directions and planes, are observed across all of orientation space for large numbers of film–substrate structural pairs. Owing to the ubiquitous epitaxy and limited number of ORs, CSE can be used to map out phase competitions across synthesis space rapidly.…”

Morphology control of self-organised Sr3V2O8 nanostructures on SrVO3 grown onto single and poly-crystalline subjacent SrTiO3 substrates

“…In this study, we use polycrystalline substrates based on the combinatorial substrate epitaxy (CSE) approach in order to provide a full investigation of the different NS which can be obtained based on the crystalline orientations of the SVO matrix. In those polycrystalline substrates, each grain acts as a single crystal for the growth of the thin film [30][31][32][33][34][35][36][37] , so that all crystalline orientations of the SVO film can be obtained with only one substrate. These substrates can be synthetized from exotic materials with different structures not commercially available 30,31,35 .…”

“…In those polycrystalline substrates, each grain acts as a single crystal for the growth of the thin film [30][31][32][33][34][35][36][37] , so that all crystalline orientations of the SVO film can be obtained with only one substrate. These substrates can be synthetized from exotic materials with different structures not commercially available 30,31,35 . In the case of STO, atomically flat surfaces can be obtained 36 and also that the size of each grains can be tuned from 1 to 40 m depending on the annealing process.…”

Crystal Orientations Dependent Polarization Reversal in Ferroelectric PbZr0.2Ti0.8O3 Thin Films for Multilevel Data Storage Applications

“…Also CSE technique enables growth of complex oxides, and its micro structure-property relationship at grain scale. [8,9] The polycrystalline La 0.7 Sr 0.3 MnO 3 (LSMO) substrate is utilized, which offers low lattice mismatch for the growth of PZT films, and also can be used as conductive bottom electrode for piezoresponse force microscopy (PFM) studies to record the polarization reversal data in different crystal orientations. The different steps involved in obtaining library of ferroelectric properties as a function of crystal orientations at grain scale are described in schematic representation in Figure 1a.…”