Method for Computing the Electrostatic Energy of the Complex and Defect Lattices of Ionic Compounds

Boganov, A.G.; Cheremisin, I.I.; Rudenko, V. S.

doi:10.1007/978-1-4899-4824-3_3

Cited by 2 publications

(2 citation statements)

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“…In another study, Wulf et al [12] found that in glasses a rare gas is usually surrounded by several oxygen atoms (its nearest neighbours). Extrapolation of results published by Boganov et al [14] show that at room temperature He is about 10 8 times more mobile in SiO 2 than is Ar. There is however a lack of data in the area of rare gas diffusivity in glasses.…”

Section: Introductionmentioning

confidence: 51%

Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

Ntsoenzok¹,

Assaf²,

Ruault

2005

MRS Proc.

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In this pioneering study, we have extended noble-gas implant-induced cavity generation in Si and other semiconductors to a dielectric, viz., SiO 2 by implanting a variety of inert gas species. It has been seen that helium and neon do not induce bubbles/cavities in SiO 2 , regardless of implantation parameters and nature of the sample. Krypton and xenon implantation however result in bubbles/cavities formation in the oxide layer. In the case of Xe a minimum threshold dose of about 10 16 cm -2 is needed for their formation. Characterization by cross-section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) showed that bubbles/cavities remain even after a 1100°C anneal, while Xe strongly desorbs out at that temperature. C-V measurements reveal that the effective dielectric constant K is reduced from 3.9 SiO 2 for bulk SiO 2 to < 2.6, thus making this technique very attractive for low-k applications in Si technology.

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Section: Introductionmentioning

confidence: 51%

Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

Ntsoenzok¹,

Assaf²,

Ruault

2005

MRS Proc.

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“…Since the charged centres in the lattice are located periodically, the expression for the potential presents a series which always converges poorly. To calculate the electrostatic potential, several approaches have been proposed in the past [10][11][12][13][14][15][16]. Of these, the Ewald method is the one most often considered [11].…”

Section: Methods Of Coulombic Energy (Electrostatic Potential) Evaluamentioning

confidence: 99%

Lattice energy of organic ionic crystals and its importance in analysis of features, behaviour and reactivity of solid-state systems

Błażejowski

Łubkowski

1992

Journal of Thermal Analysis

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A general approach to the theoretical evaluation of the crystal lattice energy of ionic substances, particularly those composed of monoatomic ions, is outlined in detail. Subsequently, the possibilities of theoretical prediction of the lattice energy of complex organic and inorganic ionic substances are discussed. Lastly, the importance of the lattice energy in examinations of the properties and behaviour of solid-state systems, is treated, together with the prospects of developing a model describing the kinetics of solid-state processes.Keywords: kinetics, lattice energy, solid-state systems General problemsThe crystal lattice energy (Ec) is the most important thermochemical characteristic accounting for the structure, properties and behaviour of solids. It is generally defined as the amount of energy which has to be supplied to transfer the species from the crystal lattice to the gaseous phase, where no interactions occur. This means that the crystal lattice energy reflects the magnitude of cohesive forces keeping the species in the solid phase, or in other words it determines the energy of interaction between the species in the solid phase.In the case of molecular crystals, where the species in the solid and gaseous phases are the same molecules, the lattice energy is simply the sublimation ener- John Wiley & Sons, Limited, ChichesterA k~d~r~ini l~i,'wdA R1Jdnnp~t

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Method for Computing the Electrostatic Energy of the Complex and Defect Lattices of Ionic Compounds

Cited by 2 publications

References 6 publications

Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

Lattice energy of organic ionic crystals and its importance in analysis of features, behaviour and reactivity of solid-state systems

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