Method for Determining the Doping Efficiency of Dispersed Semiconductor Metal Oxide Materials

Abstract

In this paper, a method for determining the doping efficiency of dispersed semiconductor metal oxide materials is proposed proposing to use the dependences of the free charge carrier concentration, normalized to the concentration of the doping impurity (Ne spec.), on the content of this impurity. The possibilities of this method are demonstrated by the example of studying the effect of technological factors on the efficiency of doping of indium oxide with tin and doping of tin oxide with antimony. It is shown that it is impossible to achieve the concentration of free charge carriers in the ITO material, higher than that in ATO materials, due to the lower solubility of tin in the In2O3 lattice, as compared with the solubility of antimony in the SnO2 lattice.

Single-crystalline-like indium tin oxide thin films prepared by plasma enhanced atomic layer deposition

“…Using the density of the bulk In 2 O 3 , the theoretical carrier concentration (in cm À3 ) can be expressed as (3 Â 10 20 ) Â C sn , where C sn is the Sn content (in at%). 49,50 The ratio of the actual carrier concentration to the theoretical value is defined as the doping efficiency, with an value of 100% representing that each incorporated Sn generates one free electron. 15 Accordingly, the ITO film with a 5% SnO 2 cycle ratio has a doping efficiency of about 86%.…”