Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics

Zatsepin, A. F.; Biryukov, D. Yu.; Кортов, В. С.

doi:10.1002/pssa.200420054

Cited by 17 publications

(16 citation statements)

References 20 publications

(25 reference statements)

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“…74,75,76,77 Defects in SiO 2 are also observed in the DUV photoemission spectra of glassy SiO 2 and quartz implanted with metals ions. 78,79 In Fig. 3, the highest occupied state probed in our experiment (see Fig.…”

Section: Resultsmentioning

confidence: 99%

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

et al. 2017

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Tailoring band alignment layer-by-layer using heterojunctions of two-dimensional (2D) semiconductors is an attractive prospect for producing next-generation electronic and optoelectronic devices that are ultra-thin, flexible, and efficient. 2D layers of transition metal dichalcogenides (TMDs) in laboratory devices have already shown favorable characteristics for electronic and optoelectronic applications. Despite these strides, a systematic understanding of how band alignment evolves from monolayer to multilayer structures is still lacking in experimental studies, which hinders development of novel devices based on TMDs. Here we 2 report on the local band alignment of monolayer, bilayer, and tri-layer MoS 2 on a 285-nm-thick SiO 2 substrate using a new approach to probe the occupied electronic states based on photoemission electron microscopy and deep ultraviolet light. Local measurements of the vacuum level and the valence band edge at the Brillouin zone center show that the addition of layers to monolayer MoS 2 increases the relative work function, and pushes the valence band edge toward the vacuum level. We also deduced n-type doping of few-layer MoS 2 and type-I band alignment across monolayer-to-bilayer and bilayer-to-trilayer lateral junctions. Conducted in isolation from environmental effects owing to the vacuum condition of the measurement and an insulating SiO 2 substrate, this study shows a new metrology to uncover electronic properties intrinsic to MoS 2 semiconducting layers and emerging 2D crystals alike.

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Section: Resultsmentioning

confidence: 99%

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

et al. 2017

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“…The OSEE intensity was measured in a vacuum of 10 -4 Pa using a VEU-6 secondary-electron multiplier. The temperature of the test samples was 80÷800 K. Experimental OSEE spectrum dependences were normalized to the value of the light flux and then were processed by an original technique [2].…”

Section: Experimental Techniquementioning

confidence: 99%

Non‐radiative relaxation of excited states of non‐bridging oxygen hole centers in silica

Zatsepin¹,

Кортов²,

Biryukov³

2007

Phys. Status Solidi (c)

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Processes involved in the excited-state relaxation of non-bridging oxygen hole centers (NBOHCs) were studied in glassy SiO 2 using luminescence, optical absorption and photoelectron emission spectroscopy. It was shown that photoexcited NBOHCs generally have three channels of relaxation. Along with radiative transitions responsible for the luminescence band at 1.9 eV, two non-radiative channels caused by transitions between levels of photoexcited state were observed. The first non-radiative channel was connected with transformation of the electron excitation energy to thermal lattice vibrations and represented an intracenter process of NBOHC luminescence quenching (the activation barrier was 0.05 eV). The second non-radiative relaxation channel for excited NBOHCs was identified as thermally activated external luminescence quenching with the energy barrier of 0.46 eV. As a result of realization of the specified process, the transfer of the excitation energy from NBOHCs to oxygen-deficient centers (ODCs) acting as electron emitters took place.

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“…The obtained non-selective spectral dependences were processed using original 'Photoelectron' and 'Spectrograph' software [10,11]. The method for processing of non-selective OSEE spectra is described in detail elsewhere [12,13]. Here in the following we describe only the main steps of the method.…”

Section: Optically Stimulated Electron Emissionmentioning

confidence: 99%

Photosensitive defects in silica layers implanted with germanium ions

Zatsepin¹,

Fitting²,

Кортов³

et al. 2009

Journal of Non-Crystalline Solids

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a b s t r a c tGe-implanted silica layers have been investigated by high-power pulsed synchrotron-photoluminescence (PL), photoluminescence excitation spectroscopy (PLE), and optically stimulated electron emission (OSEE) with respect to association of excitation and absorption bands to respective emission bands and lifetimes of excited defect states. In this way singlet-singlet (4.35 eV) and triplet-singlet (3.18 eV) radiative transitions from excited states of oxygen-deficient centers (ODC) in Ge-doped silica glass are characterized by their absorption and emission bands as well as their lifetimes. The main channel for non-radiative relaxation of photoexcitation is electron emission by the OSEE effect. The OSEE shows non-radiative transitions of surface E 0 s and bulk E 0 -centers found with concentrations of (2.7-3.4) Â 10 12 cm À2 and (2-4) Â 10 16 cm À3, respectively.

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Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics

Cited by 17 publications

References 20 publications

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

Non‐radiative relaxation of excited states of non‐bridging oxygen hole centers in silica

Photosensitive defects in silica layers implanted with germanium ions

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