A characterization technique for oxide ferroelectric materials using high-energy ion beam is presented. In this study, depth profiles of chemical elements are obtained for SBT films grown by MOD method and by MOCVD method respectively. Hydrogen depth profiles are taken by ERD technique with an Al absorber foil. Depth profiles of other elements are determined with RBS technique. For the MOD-grown sample, the elemental amount ratio was determined as Sr1.00Bi2.06 ± 0.03Ta2.02 ± 0.03O8.33 ± 0.17. The oxygen deficiency in the MOD-grown SBT film was uniformly observed at every depths. For the MOCVDsample and the MOD-sample, the underlying Pt electrode layers contained 4.7 at.% and 3.8 at.% of hydrogen respectively.