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Interface structure and surface morphology of (Co, Fe, Ni)/Cu/Si(100) thin films Co, Ni, and Pt metal thin films have been formed using the pulsed laser deposition method. Several fundamental properties of this method, e.g., deposition rate for the KrF excimer laser with various irradiation energy densities, distribution of film thickness, change of the deposition rate as a function of the number of shots, change of the target morphology, and corresponding film structure, are examined. It is found that the deposition rate and the film structure ͑amorphous and/or polycrystalline͒ depend on the state of the morphology of the target. An attempt to control the target morphology was performed, i.e., the rotation of the Co target restrained the target surface from the formation of laser cones and as a result, the amorphous Co films could be obtained.

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A magneto-active microwave plasma chemical vapour deposition technique was developed by pulse modulation of the discharge to reduce the time-averaged microwave power for diamond film synthesis at low temperature. Due to a threshold power being required to start growth, the practical growth rate obtained by using the pulse-modulated plasma became three times larger than that obtained by using a continuous plasma of time-averaged power near the threshold. The methyl (CH 3 ) radical density was measured in continuous or pulse-modulated plasma by infrared laser absorption spectroscopy and compared to the growth rate. The time-averaged CH 3 radical density was also enhanced by pulse modulation; it was up to 1.3 times larger than that in the continuous plasma. Though the correlation between CH 3 density and diamond growth rate was not clear, the number of carbon atoms supplied as CH 3 radicals was larger than the actual growth rate by almost two orders of magnitude.