Method of Precise Positioning for Defect Failure Analysis Based on Nano-Probing and EBAC

Lan, Kuibo; Li, Tian; Wei, Yongqi; Huang, Xiaodi; Qin, Guoxuan

doi:10.1109/tdmr.2020.3016982

Cited by 2 publications

(2 citation statements)

References 18 publications

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“…Shifts in the Fermi levels can be evaluated by the G-band peak positions [24] using Raman spectra analysis [24][25][26][27][28]; thus, we expect that variations in the density of states can be evaluated using a G-band peak position map by Raman spectroscopy. The electron beam absorbed current (EBAC) method can be used to visualize the absorbed current due to electron beam irradiation in order to identify the open and/or short points in various semiconductor devices [29][30][31][32][33][34][35]. It was considered that EBAC measurements can evaluate local electrical properties of graphene with nanoscale spatial resolution of materials during material characterization.…”

Section: Introductionmentioning

confidence: 99%

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Okigawa,

Nakajima,

Okazaki

et al. 2023

J. Phys. D: Appl. Phys.

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The electron beam absorbed current (EBAC) method identifies the open and/or short points in various semiconductor devices, which can be applied to characterize the current path and local resistance in graphene. In this study, potassium (K)-doped few-layer graphene with inhomogeneous K atoms seemed to be one of the appropriate materials to characterize the current path by EBAC. Nonuniform contrast in the EBAC image due to inhomogeneous local resistances is observed, which is explained by the variation of the Fermi level in the graphene channel from the G-band peak shifts from Raman spectroscopy. The changes in the contrast of the EBAC images are obtained by applying a gate voltage. These changes are attributed to the modulation of the local carrier densities by applying the gate voltage. For comparison, uniform contrast in EBAC images and uniform G-band peak positions of undoped few-layer graphene field effect transistors are confirmed. The obtained results suggest that homogeneous Fermi level leads to a uniform current path. EBAC enables us to evaluate the uniformity of local resistance and current through a pass in the graphene channel, which can be applied to other two-dimensional materials, such as transition metal dichalcogenides, graphene oxide, and hexagonal boron nitride.

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Section: Introductionmentioning

confidence: 99%

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Okigawa,

Nakajima,

Okazaki

et al. 2023

J. Phys. D: Appl. Phys.

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“…After that, the Camelot navigation layout mapping analysis was employed to speculate whether there is open circuit failure of the examined sample. The precise open circuit position was then identified by nano-probing and electron beam absorbed current (EBAC) [11][12][13][14]. Scanning electron microscope (SEM) was employed to verify the accuracy of this method.…”

Section: Introductionmentioning

confidence: 99%

Open circuit defect positioning method based on dynamic photon emission microscopy and schematic analysis for mixed signal IC on SOI

Lan¹,

Wen²,

Wei³

et al. 2022

J. Phys. D: Appl. Phys.

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Failure analysis (FA) was encountered ion charging risk when using focused ion beam (FIB) to insert extra test pads for mixed signal integrated circuits (IC) on silicon-on-insulator (SOI). To overcome this challenge and to precisely locate the open circuit defect, this paper described an effective non-destructive FA method based on dynamic InGaAs photon emission microscopy and schematic/layout analysis to determine the open circuit type and position. Nano-probing and electron beam absorbed current (EBAC) was used to located the precise location of the open circuit defect. Two typical samples of mixed signal IC on SOI were used as examples (Sample 1 and 2, with extra and missing emission spots, respectively) to illustrate the analysis procedure and effectiveness for the proposed method. Scanning electron microscope (SEM) results were presented to verify the accuracy of this method. It was demonstrated that the proposed method was able to accurately determine failure of open circuit efficiently without microprobe for mixed signal IC on SOI.

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Method of Precise Positioning for Defect Failure Analysis Based on Nano-Probing and EBAC

Cited by 2 publications

References 18 publications

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Open circuit defect positioning method based on dynamic photon emission microscopy and schematic analysis for mixed signal IC on SOI

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