Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography

Okai, Nobuhiro; Lavigne, Erin; Hitomi, Keiichiro; Halle, Scott; Hotta, Susumu; Koshihara, Shunsuke; Yamaguchi, Atsuko; Tanaka, J.; Bailey, Todd

doi:10.1117/1.jmm.15.4.044001

Cited by 1 publication

(1 citation statement)

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“…The acceleration voltage is significantly higher than that of conventional CD SEM for resist pattern in which acceleration voltage lower than 1 kV is generally used to reduce resist shrinkage. [49][50][51] Although PS, which is a similar material to conventional KrF resist, is much tolerant of EB irradiation compared with conventional ArF resist, we actually observed the hole diameter increased around 3 nm due to PS shrinkage during 10 times measurement. However, the impact of the hole size variation on the image placement evaluation may be negligible because the size is considered to be isotopically changed.…”

Section: Drop Pattern Modificationmentioning

confidence: 66%

Metrology and inspection required for next generation lithography

Asano¹,

Yoshikawa²,

Hirano³

et al. 2017

Jpn. J. Appl. Phys.

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We summarize the metrology and inspection required for the development of nanoimprint lithography (NIL) and directed self-assembly (DSA), which are recognized as candidates for next generation lithography. For NIL, template inspection and residual layer thickness (RLT) metrology are discussed. An optical-based inspection tool for replica template inspection showed sensitivity for defects below 10 nm with sufficient throughput. Scatterometry was applied for RLT metrology. Feedback control with scatterometry improved RLT uniformity across an imprinting field. For DSA, metrology for image placement and cross-sectional profile are addressed. Design-based scanning electron microscope (SEM) metrology utilizing a die-to-database electron beam (EB) inspection tool was effective for image placement metrology. For the cross-sectional profile, a holistic approach combining scatterometry and critical dimension SEM was developed. The technologies discussed here will be important when NIL and DSA are applied for IC manufacturing, as well as in the development phases of those lithography technologies.

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Section: Drop Pattern Modificationmentioning

confidence: 66%