Methods for measurement of development parameters in the manufacturing line for use in photolithography modeling

Methods used in the extraction of lithographic modelling parameters for simulation packages such as PROLITHJ2' are examined. The results reveal hitherto unconsidered aspects of the development process which, when implemented in the simulations, give improved agreement with practical results with regard to characteristics such as resolution, depth-of-focus, linearity and dense/isolated bias.These refinements, which are particularly influential in the sub-half-micron regime, include the variation in photoresist dissolution properties as a function of depth into the resist film and also a small but powerful development "notch" which is observed in the development rate vs. PAC concentration curve as it approaches the minimum dissolution rate.This work therefore shows that current development models may not be adequate for some applications, and that great care must be taken in deriving and using the correct set of parameters for any one situation.

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Scaling behavior in interference lithography

Agayan

Banyai

Fernandez

1998

SPIE Proceedings

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Interference lithography is an emergin g technology that provides a means for achieving high resolution over large exposure areas (-1 m') with virtually unlimited depth of field. One-and two-dimensional arrays of deep submicron structures can be created using near i-line wavelengths and standard resist processing. In this paper, we report on recent advances in the development of this technology, focusing, in particular, on how exposure latitude and resist profile scale with interference period We present structure width vs dose curves for periods rangin, 0 from 200 nm to 1 Opm, demonstrating that deep submicron structures can be generated with exposure latitudes exceedin g 30%. Our experimental results are compared to simulations based on PROLITW2.

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Methods for measurement of development parameters in the manufacturing line for use in photolithography modeling

Cited by 4 publications

References 16 publications

Characterization of photoresist and simulation of a developed resist profile for the fabrication of gray-scale diffractive optic elements

Characterization of photoresist and simulation of a developed resist profile for the fabrication of gray-scale diffractive optic elements

Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime

Scaling behavior in interference lithography

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