Scaling behavior in interference lithography

Abstract

Interference lithography is an emergin g technology that provides a means for achieving high resolution over large exposure areas (-1 m') with virtually unlimited depth of field. One-and two-dimensional arrays of deep submicron structures can be created using near i-line wavelengths and standard resist processing. In this paper, we report on recent advances in the development of this technology, focusing, in particular, on how exposure latitude and resist profile scale with interference period We present structure width vs dose curves for periods rangin, 0 from 200 nm to 1 Opm, demonstrating that deep submicron structures can be generated with exposure latitudes exceedin g 30%. Our experimental results are compared to simulations based on PROLITW2.

Cost-effective laser interference lithography using a 405 nm AlInGaN semiconductor laser

“…V can have values between 0 and 1, with 0 being equal to a flood exposure and 1 being ideal interference. U of an interference pattern is affected by the exposure dose [5]; for patterns with the same period, a 30% change in the exposure dose can cause an ∼10% change in U [11]. Therefore, to obtain a highquality interference pattern with good U over the exposure area, V must be close to 1 and the variation of the exposure dose should be minimized over the exposure area.…”

<title>Minimizing Fizeau fringes during the contact printing of diffraction gratings</title>

“…1,2,3 For an arbitrary large area and a period as small as a few tenths of a micron, interference lithography should be used. 4,5 This paper discusses some unwanted effects that can happen during the contact printing of coarse diffraction gratings.…”

Fabrication of PDMS Nano-Stamp by Replicating Si Nano-Moulds Fabricated by Interference Lithography

“…It is well known that the resolution in conventional optical lithography is limited by optical diffraction and the optical characteristics of materials [6,7]. As μCP is not diffraction-limited, it is possible to fabricate patterns with molecule-sized features [8].…”