Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

Abstract

Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

Impact of Pulse Parameters of a DC Power Generator on the Microstructural and Mechanical Properties of Sputtered AlN Film with In-Situ OES Data Analysis

“…Then, substrates were pickled with 2% hydrofluoric acid (HF) for one minute to remove surface native oxide. Additionally, prior to the deposition, Ar+ ion bombardment was applied to clean the Al target surface to remove the oxide layer, contamination layer, and any adsorbates [22].…”