Metrology of 3D NAND in electron micrographs by scale space snakes

Adiga, Umesh; Strauss, M.; Tilson, Ashley; Arjavac, Jason; Hagger, Jack; Nelson, Dan; Roller, Justin

doi:10.1117/12.2515074

Cited by 1 publication

(1 citation statement)

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“…Recently, the angle, offset of the hole and each layer CD in the 3D NAND are measured in nanoscale using transmission electron microscope. Nanoscale metrology using transmission electron microscope is very important in that it can give more precise and detail feedback to the manufacturing process that affects the characteristics of 3D NAND [4]. Of course, It can be measured in a lower magnification of transmission electron microscope or scanning electron microscope can be used, but metrology in low magnification can introduce larger measurement error.…”

Section: Introductionmentioning

confidence: 99%

Automated Metrology on the Verticality of Cross-Sectioned Channel Hole at V-NAND with Over 200 Layers by Transmission Electron Microscope

Kim¹,

Son²,

Kang³

2021

International Symposium for Testing and Failure Analysis

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In this paper, we present a nanoscale verticality measurement method for V-NAND with 200 or more layers of high layers using an automated transmission electron microscope, which has been developed a lot in the analysis field. Nanoscale measurements in cross-sectional images in 3D-NAND with such a high layer do not include both the top and bottom areas in one image of FOV. Therefore, it is very difficult for a person to objectively measure the etching angle or verticality of the channel hole. We experimented the verticality measurement of a channel hole in the two images in different areas using an automated transmission electron microscope imaging and measurement. In this paper, we present the results and analysis of the experiment and detailed metrology methods.

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Section: Introductionmentioning

confidence: 99%