Metrology tools for EUV-source characterization and optimization

Mißalla, T.; Schuermann, Max C.; Lebert, R.; Wies, Christian; Juschkin, Larissa; Klein, R.; Scholze, Frank; Ulm, G.; Egbert, A.; Tkachenko, Boris; Chichkov, Boris N.

doi:10.1117/12.556521

Cited by 9 publications

(8 citation statements)

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“…In addition, an EUV mini calorimeter consisting of a Zr filter, a Mo/Si multilayer mirror and a photodiode was also employed. The EUV mini calorimeter calibrated by E-Mon (JOMT and AIXUV) 12) was mainly used for the measurements of absolute the 13.5 nm 2% in-band EUV energy and the angular distribution of the emitted EUV radiation. The streak photographs in the visible region were taken using a highspeed image converter camera (IMACON 468) to examine the plasma dynamics inside the capillary.…”

Section: Methodsmentioning

confidence: 99%

Characteristics of Xenon Capillary Z-Pinch Extreme Ultraviolet Lithography Source Driven by Different dI/dt Discharge Current Pulses

Song¹,

Iwata²,

Homma³

et al. 2005

Jpn. J. Appl. Phys.

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Next-generation lithography will require an extreme-ultraviolet (EUV) light source that ensures high radiation intensities at a wavelength of around 13.5 nm. The characteristics of pinch dynamics and emission in this spectral range were studied experimentally for xenon capillary Z-pinch plasma driven by different dI=dt discharge current pulses. The pinch dynamics of the capillary Z-pinch plasma were examined by employing a high-speed camera, and the spectral emission from plasma was inspected using an EUV photodiode, a mini calorimeter and spectrometers. Our results confirm that high-dI=dt discharge current has better performance in comparison with the low one in terms of plasma dynamics, EUV power output and debris generation.

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Section: Methodsmentioning

confidence: 99%

Characteristics of Xenon Capillary Z-Pinch Extreme Ultraviolet Lithography Source Driven by Different dI/dt Discharge Current Pulses

Song¹,

Iwata²,

Homma³

et al. 2005

Jpn. J. Appl. Phys.

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“…Mimicking target spectra with a single reflection, such as with M4 or M5 is a means for high-fidelity characterization of the in-band power of EUV sources in lithography systems [22]. However, a more specific comparison of sources can be done in terms of their brightness, which specifies the power within the targeted in-band spectrum also per source area and emission solid angle.…”

Section: Mimic Mirrors For Use In Dual Reflectionmentioning

confidence: 99%

Reflective aperiodic multilayer filters for metrology at XUV sources

et al. 2020

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We present a general method for designing XUV aperiodic multilayer mirrors that can mimic a given target spectrum, specifically, the spectral transmission of an XUV optical system. The method is based on minimizing a merit function and using fidelity parameters that quantify the matching of the multilayer reflectivity spectrum with that of the target spectrum. To assess the feasibility of fabricating such a system, we show how to reduce the layer-to-layer thickness variations throughout the aperiodic layer stack. We demonstrate the design method using an example of an EUV optical system composed of 12 identical Mo/Si multilayer mirrors having a reflectivity peak at 13.5 nm. We found that the target spectrum can be mimicked with high fidelity either with a single reflection at an aperiodic multilayer mirror combined with standard absorbing filters or, if required, with two subsequent reflections at a mimic mirror. These examples demonstrate the applicability for metrology at XUV sources, including spectrally proper source imaging. Because our approach is of general applicability, the process can be used to mimic any other narrowband, single-peaked target spectrum in the XUV region.

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“…Fig. 12 shows a 'Multilayer-Tool' 11 for total power measurement of an EUV plasma source. This instrument uses two consecutive multilayer mirrors in a zigzag configuration as a bandpass and a diode as a detector.…”

Section: Diagnostics For Plasma Sources: Development and Calibrationmentioning

confidence: 99%

Metrology in the soft x-ray range: from EUV to the water window

Laubis

Scholze

Ulm

2008

Advances in Optical Thin Films III

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Metrology in the soft X-ray range has various applications ranging from instrumentation for solar astronomy to plasma experiments and EUV Lithography. The Physikalisch-Technische Bundesanstalt (PTB) with its laboratory at the electron storage ring BESSY II is a centre of soft X-ray radiometry and supports national and European research and development by carrying out high-accuracy at-wavelength measurements. The absolute detection efficiency of entire detection systems, diodes or cameras can be traced to SI units with a typical relative uncertainty of 0.5 % to 1 % using a cryogenic electrical substitution radiometer. For reflectometry on multilayer mirrors (MLMs) PTB operates a large reflectometer accommodating samples of up to 550 mm in diameter and 50 kg in weight, allowing sample alignment in 6 degrees of freedom. The relative measurement uncertainty for the spectral reflectance is typically in the range of 0.15 % and the long-term reproducibility in the range of 0.10 %. To investigate roughness, scatterometry is employed where scattered light around the specular beam is mapped using a calibrated CCD.

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Metrology tools for EUV-source characterization and optimization

Cited by 9 publications

References 0 publications

Characteristics of Xenon Capillary Z-Pinch Extreme Ultraviolet Lithography Source Driven by Different dI/dt Discharge Current Pulses

Characteristics of Xenon Capillary Z-Pinch Extreme Ultraviolet Lithography Source Driven by Different dI/dt Discharge Current Pulses

Reflective aperiodic multilayer filters for metrology at XUV sources

Metrology in the soft x-ray range: from EUV to the water window

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