2015
DOI: 10.1007/s11431-015-5796-1
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Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires

Abstract: The effects of Mg doping (Mg Al ) and native N vacancy (V N ) on the electronic structures and transport properties of AlN nanowire (AlNNW) were theoretically investigated by using density functional theory. Either the Mg Al defect or the V N defect prefers to be formed on the AlNNW surfaces. Both Mg Al and V N defects could increase the conductivity owing to introducing a defect band inside the band gap of AlN and split the AlN band gap into two subgaps. The defect concentration has little influence on the ma… Show more

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Cited by 8 publications
(2 citation statements)
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References 59 publications
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“…Metal nanowires are expected to play an important role in future nanoscale mechanical, optical, and electrical devices due to their unique structure, properties, and the great potential they show in a variety of applications such as molecular electronics and nanoelectromechanical systems (NEMS) [ 1 , 2 ]. In recent years, various nanodevices have been developed from nanowires, such as nano-laser [ 3 , 4 ] and quantized conductance atomic switches [ 5 ].…”
Section: Introductionmentioning
confidence: 99%
“…Metal nanowires are expected to play an important role in future nanoscale mechanical, optical, and electrical devices due to their unique structure, properties, and the great potential they show in a variety of applications such as molecular electronics and nanoelectromechanical systems (NEMS) [ 1 , 2 ]. In recent years, various nanodevices have been developed from nanowires, such as nano-laser [ 3 , 4 ] and quantized conductance atomic switches [ 5 ].…”
Section: Introductionmentioning
confidence: 99%
“…7 Previously, the growth/synthesis of Mg-doped AlN nanowires using various techniques, including direct arc discharge method, metal organic chemical vapor deposition (MOCVD), and molecular beam epitaxy (MBE), have been reported. [8][9][10][11][12][13][14] These studies, however, mostly focus on the magnetic properties of Mgdoped AlN nanowires. In addition, such Mg-doped AlN nanowires exhibit poor optical qualities, and band-edge emission was not measured at room temperature.…”
mentioning
confidence: 99%