Mg_0.35Zn_0.65O/Al/ZnO Photodetectors With Capability of Identifying Ultraviolet-A/Ultraviolet-B

A high responsivity, high detectivity, and high response speed MSM UVB photodetector based on SnO2 microwires

“…1–4 UV radiation can be divided into four regions, UVA (400–320 nm), UVB (320–280 nm), UVC (280–200 nm), and VUV (200 nm–10 nm). 5–7 Due to its applications in life science, equipment manufacturing, environmental monitoring, etc. , the detection of UV light has received widespread attention in recent years.…”

“…[1][2][3][4] UV radiation can be divided into four regions, UVA (400-320 nm), UVB (320-280 nm), UVC (280-200 nm), and VUV (200 nm-10 nm). [5][6][7] Due to its applications in life science, equipment manufacturing, environmental monitoring, etc., the detection of UV light has received widespread attention in recent years. 8 To obtain desirable photodetection performance, a variety of wide bandgap semiconductor materials, such as β-Ga 2 O 3 , 9 BN, 10 AlN, 11 Al x Ga 1−x N, 12 GaN, 13 Mg x Zn 1−x O, 14 ZnO, 15 etc., have been employed.…”

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

“…For device stricture, two-terminal types such as Schottky barrier, [11][12][13] p−njunction, [14][15][16] and metal-semiconductormetal [17][18][19] were commonly employed in conventional visible-blind UVPDs. However, because of the shading effect caused by the front opaque metal contact of the active layer and the poor quality in the pn heterojunction (HJ), their detection performance remains to be improved.…”