2006
DOI: 10.1109/tmag.2006.877743
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MgO-based tunnel junction material for high-speed toggle magnetic random access memory

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Cited by 77 publications
(29 citation statements)
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“…16 Pillars were defined using electron-beam lithography with MAN2403 negative resist and patterned by argon ion milling ͑500 V, 40 mA, 22.5°for 4.5 min͒ down to the Ta back electrode. The resist was then removed using oxygen plasma.…”
mentioning
confidence: 99%
“…16 Pillars were defined using electron-beam lithography with MAN2403 negative resist and patterned by argon ion milling ͑500 V, 40 mA, 22.5°for 4.5 min͒ down to the Ta back electrode. The resist was then removed using oxygen plasma.…”
mentioning
confidence: 99%
“…Another possibility for the preparation of the smooth defect-free MgO layer would be the Mg deposition followed by an oxidation step and post annealing. This process in combination with the plasma oxidation was recently shown to deliver better quality tunneling barriers in the MgO-based MTJs [22].…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, one must assure that a pre-defined BEOL thermal budget should not negatively affect the attributes of MTJs. For example, a synthetic antiferromagnet (SAF) structure with a typical Ru spacer may not have sufficient thermal endurance to sustain BEOL thermal processes [30], [31]. In addition, interdiffusion between the free layer and the capping layer can degrade the properties of the free layer [32].…”
Section: Mtj Thermal Budgetsmentioning
confidence: 99%