MgZnO-Based Schottky Barrier Ultraviolet-B Photodiode by Ultrasonic Spray Pyrolysis Deposition

A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses

“…As such, they are suitable for utilization in conjunction with GaN materials to improve gas sensing performance. 14,39,130 To suppress surface leakage and enhance the stability of the device, numerous dielectrics—for example, NiO, 131 GaO x (AlGaO x ), 132,133 SiO 2 , 134 IrO 2 , 135 HfO 2 , 136 ZnO, 137 Ta 2 O 5 , 138 and Sc 2 O 3 39 —have been proposed to develop MOS-type sensors. Moreover, the results of experiments have shown that the trapping of hydrogen atoms is accompanied by oxygen atoms on the surface of the semiconductor.…”