2017
DOI: 10.1016/j.flatc.2017.06.003
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MICAtronics: A new platform for flexible X-tronics

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Cited by 161 publications
(147 citation statements)
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“…Cleavage of muscovite (KAl 2 (Si 3 Al)O 10 (OH) 2 : a = 5.33 Å, b = 9.23 Å, c = 10.22 Å, and β~100°) along this vdW gap layer produces two large, atomically flat surfaces, with equal but randomly distributed K + atoms preserving charge neutrality, making muscovite mica an ideal substrate for vdW heteroepitaxy. 27 The surface of mica provides an interesting playground for the study of 2D ion diffusion, 2D crystal nucleation, surface conductivity, molecular surface phenomena of adhesion, friction, and colloidal interactions. 28 Gold thin film on muscovite substrate was an early demonstration of a heteroepitaxy with mica substrate.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Cleavage of muscovite (KAl 2 (Si 3 Al)O 10 (OH) 2 : a = 5.33 Å, b = 9.23 Å, c = 10.22 Å, and β~100°) along this vdW gap layer produces two large, atomically flat surfaces, with equal but randomly distributed K + atoms preserving charge neutrality, making muscovite mica an ideal substrate for vdW heteroepitaxy. 27 The surface of mica provides an interesting playground for the study of 2D ion diffusion, 2D crystal nucleation, surface conductivity, molecular surface phenomena of adhesion, friction, and colloidal interactions. 28 Gold thin film on muscovite substrate was an early demonstration of a heteroepitaxy with mica substrate.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it is very crucial to examine the characteristics of muscovite and identify key features of this type of oxide heteroepitaxy. 27 Mica possesses very high yield strain and the thickness of a single cleaved mica sheet can be controlled down to few microns with superior flexibility. In fact, a bending radius down to 0.03 cm is reported for 100 nm thick mica sheet.…”
Section: Introductionmentioning
confidence: 99%
“…A fast-growing field is van der Waals oxide epitaxy. 65,66 It has been demonstrated that several different oxides can be grown heteroepitaxially on mica by van der Waals bonds. The benefit of van der Waals epitaxy (vdWE) is that the film can be grown strain free retaining the bulk lattice parameters even at large lattice mismatch.…”
Section: Concluding Remarks and Future Workmentioning
confidence: 99%
“…Recently, the advent of 2D layered mica breaks new ground in fabricating flexible all‐inorganic films because of the atomically flat surface, chemical inertness, heat resistance, and so on. [ 17 ]…”
Section: Introductionmentioning
confidence: 99%