Micro-fabrication of crystalline silicon by controlled alkali etching

Yuan, Fang; Guo, Yuandong; Ying-chun, Liang; Fu, Honggang; Kai, Cheng; Luo, Xichun

doi:10.1016/j.jmatprotec.2003.10.060

Cited by 18 publications

(11 citation statements)

References 11 publications

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“…14 Therefore, Fulong et al concluded that K + and Na + cations do not affect the etching rate and shapes of micro-island formations. 14 60%, 24%, and 10 wt% concentrations, respectively. 11 Even though a comparison between the same concentration was not made for all solutions, it was stated that no significant difference in etching behavior could be found when comparing LiOH, NaOH, and KOH.…”

Section: Methodsmentioning

confidence: 99%

“…The etching of silicon has been demonstrated to be dependent on dopants, the silicon orientation, etchants, ,, and additives. , The vast majority of this earlier literature has focused on silicon etching for the application of microfabrication. Therefore, most studies have evaluated the corrosion of silicon through topological studies or weight loss measurements.…”

Section: Introductionmentioning

confidence: 99%

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Electrochemical Activation of Silicon: Enhancing Hydrogen Production from FeNi Electrocatalysts

2022

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A two-sided electrode composed of Fe x Ni100–x O y and Si was implemented to produce hydrogen. The hydrogen evolution reaction is facilitated by the Fe x Ni100–x O y electrocatalyst. The high pH of the alkaline electrolyte and the reducing potential of the electrode result in the activation of the Si side, allowing spontaneous production of H2. Results demonstrate that the Fe x Ni100–x O y composition and the electrolyte composition influence the performance of the Fe x Ni100–x O y /Si system. The activation and subsequent production of H2 by the Si was demonstrated to be favored in 0.1 M KOH and NaOH electrolytes over LiOH, and this result was consistent when the electrochemical cell was operated under applied voltage and at open circuit voltage. At the same time, results showed that the Fe80Ni20/Si composition maintained a current of −10 mA at a lower potential (∼50 mV) compared to the Fe20Ni80/Si composition. Overall, the results of this study demonstrate that the two-sided Fe x Ni100–x O y /Si electrode can be used to boost the production of hydrogen, leading to a maximum of 140% H2 efficiency, which includes both Faradaic H2 production and non-Faradaic H2 evolution through Si corrosion.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrochemical Activation of Silicon: Enhancing Hydrogen Production from FeNi Electrocatalysts

2022

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“…The SiC oxidation reaction is extremely slow at room temperature, and even at high‐temperature and in an oxygen or ozone atmosphere the SiC oxidation rate remains ≈0.1 nm min −1 , [ 21 ] which greatly limits the removal rate of the material in the subsequent hydrofluoric acid (HF) etching. As such, some traditional wet chemical etching methods [ 22,23 ] for rapid silicon etching are no longer applicable for SiC etching.…”

Section: Introductionmentioning

confidence: 99%

“…extremely slow at room temperature, and even at high-temperature and in an oxygen or ozone atmosphere the SiC oxidation rate remains ≈0.1 nm min −1 , [21] which greatly limits the removal rate of the material in the subsequent hydrofluoric acid (HF) etching. As such, some traditional wet chemical etching methods [22,23] for rapid silicon etching are no longer applicable for SiC etching. To address the slow oxidation rate of SiC, several methods have been proposed, which can be classified as external-biasassisted wet etching and external-bias-free wet etching.…”

mentioning

confidence: 99%

Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide

Shi

Chen

et al. 2022

Small Methods

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devices, [13] such as fin field-effect transistor effect based metal-oxide-semiconductor field-effect transistor [14,15] and insulated gate bipolar transistors (IGBTs), [16,17] which are used in high-speed railways [18,19] and electric vehicles. [20] Despite these advantages, the unique properties of SiC also raise several challenges for device fabrication. The SiC oxidation reaction isThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/smtd.202200329.

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“…This process is selected because of its repeatability, fabrication in uniformity, and low production cost. In this technique, the hydroxyl ions react with silicon atoms of the exposed surfaces, which are dissolved during wet etching processes [4]. This technique is depending on strong oxidizing agent (KOH as an etchant), it has the important characteristics (i.e.…”

Section: Introductionmentioning

confidence: 99%

Studying the wetting agent impact in the porous silicon production

Nabil¹,

Motaweh²

2019

Egypt. J. Chem.

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N EWLY, porous silicon (PS) powder has been developed to meet the requirements of various fields due to its unique physical and chemical properties. In this research, the PS powder is produced using a combination of both (alkali chemical etching and ultra-sonication techniques) from commercial polycrystalline silicon powder. It shows the dependence of the crystal structure and the morphology on the value of wetting agent concentration, which is controlled on the rate of each chemical reaction in the formation process. For the first time, the PS pines shape is a product at using the preparation conditions (7 wt %KOH, 3 hours, and 15 Vol% NPA). On the other hand, the (PS) micro-rod clusters are produced with different values of both the diameter and the pore size at wetting agent concentrations variation (20, and 25 Vol% NPA). The most stable crystal structure of silicon surface is Si (111), it has a rhombohedral unit cell. By changing the wetting agent concentration value, then the crystal structure of the product powder is changed too, from rhombohedral plane Si (111) to the hexagonal plane Si (211). So, this increases the chances of using the PS product in many fields whether medical or engineering.

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Micro-fabrication of crystalline silicon by controlled alkali etching

Cited by 18 publications

References 11 publications

Electrochemical Activation of Silicon: Enhancing Hydrogen Production from FeNi Electrocatalysts

Electrochemical Activation of Silicon: Enhancing Hydrogen Production from FeNi Electrocatalysts

Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide

Studying the wetting agent impact in the porous silicon production

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