Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films

Dobal, P. S.; Katiyar, Rajesh K.; Bharadwaja, S. S. N.; Krupanidhi, S. B.

doi:10.1063/1.1356730

Cited by 27 publications

(15 citation statements)

References 18 publications

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“…On the other hand, Tenne et al 16 studied vibrational properties of Ba 0.5 Sr 0.5 TiO 3 thin films prepared by pulsed laser deposition and they observed that the temperature dependence of the Raman spectra indicates a broad ferroelectric phase transition in the thin films. Dobal et al 17 phase. Gakh et al 18 reported the phase transition of Pb 1Ϫx Ca x TiO 3 thin films.…”

Section: Introductionmentioning

confidence: 99%

Investigation of phase transition in ferroelectric Pb0.70Sr0.30TiO3 thin films

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Longo

et al. 2004

Journal of Applied Physics

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We have carried out dielectric and Raman spectroscopy studies at the 298 -623 K temperature range in polycrystalline Pb 0.70 Sr 0.30 TiO 3 thin films grown by a soft chemical method. The diffuse phase-transition behavior of the thin films was observed by means of the dielectric constant versus temperature curves, which show a broad peak. Such behavior was confirmed later by Raman spectroscopy measurements up to 823 K, indicating that a diffuselike phase transition takes place at around 548 -573 K. The damping factor of the E(1TO) soft mode was calculated using the damped simple harmonic oscillator model. On the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the microscopic local cubic symmetry by chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands at some temperature interval above the ferroelectric-paraelectric phase-transition temperature suggested a diffuse nature of the phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in this thin film.

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Section: Introductionmentioning

confidence: 99%

Investigation of phase transition in ferroelectric Pb0.70Sr0.30TiO3 thin films

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Leite

Longo

et al. 2004

Journal of Applied Physics

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“…through the Holakovsky[13] triggering mechanism) [4]. It should be noted, however, that the earlier spectroscopic studies [14][15][16] indicated the existence of additional lattice modes with temperature dependent frequencies.arXiv:1401.3730v1 [cond-mat.mtrl-sci] …”

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“…through the Holakovsky [13] triggering mechanism) [4]. It should be noted, however, that the earlier spectroscopic studies [14][15][16] The principal aim of this work is to provide a systematic overview of the temperature dependence of the low frequency phonon modes of the AF PbZrO 3 by means of polarized IR and Raman spectroscopic study of single domain specimens. The results obtained testify the existence of multiple soft modes of different symmetry in orthorhombic PbZrO 3 .…”

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Multiple Soft-Mode Vibrations of Lead Zirconate

et al. 2014

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Polarized Raman, IR and time-domain THz spectroscopy of orthorhombic lead zirconate single crystals yielded a comprehensive picture of temperature-dependent quasiharmonic frequencies of its low-frequency phonon modes. It is argued that these modes primarily involve vibration of Pb and/or oxygen octahedra librations and their relation to particular phonon modes of the parent cubic phase is proposed. Counts of the observed IR and Raman active modes belonging to distinct irreducible representations agree quite well with group-theory predictions. The most remarkable finding is the considerably enhanced frequency renormalization of the y-polarized polar modes, resulting in a pronounced low temperature dielectric anisotropy. Results are discussed in terms of contemporary phenomenological theory of antiferroelectricity.PACS numbers: 77.80.Bh, 77.84.Cg Although the ferroelectric and antiferroelectric materials have a lot in common, the latter have been much less investigated. An obvious reason is the absence of the direct linear coupling of the antiferroelectric (AF) order parameter to the macroscopic electric field.At the same time, a nonlinear coupling to the macroscopic electric field is still present. Therefore, AF materials actually do provide interesting functionalities, as well. In fact, the AF oxides are promising materials for high-energy storage capacitors, high-strain actuators and perhaps even for electrocaloric refrigerators [1][2][3]. The interest in the improvement of our understanding of AF oxides has been expressed recently [1,2,4,5].Lead zirconate, PbZrO 3 , is the best known example of an AF oxide -it is an end-member of technologically relevant solid solutions with PbTiO 3 (piezoelectric PZTs) [1,2,4,[6][7][8]. The parent paraelectric phase is a simple cubic perovskite with a 5-atom unit cell (P m3m, Z=1). Below the AF phase transition (T C ∼ 500 K), it goes over into an orthorhombic P bam (Z=8) structure [10,11]. The space-group symmetry change can be well understood[1] as a result of the condensation of two order parameters [1,4,9,12]. One of them is a polarization wave of a propagation vector Q Σ = (0.25, 0.25, 0) pc , the other order parameter is a Q R = (0.5, 0.5, 0.5) pc oxygen octahedra tilt mode (here pc stands for pseudocubic lattice, see Figs. 1-2).Superpositions of Q Σ , Q R include also Γ, X, M and Q S = (0.25, 0.25, 0.5) pc cubic-phase Brillouin zone points. All of these points become Brillouin zone centers in the P bam phase (see Fig. 2). Nevertheless, recent inelastic X-ray scattering experiments [4] have clearly demonstrated that the critical scattering occurs only in the vicinity of the Γ-point. Based on this experimental result, it was proposed that the AF phase transition is driven by a single mode, the Γ-point ferroelectric soft mode [4]. Within this model, the condensation of the Q Σ -point mode can be ascribed to the flexoelectric coupling with the ferroelectric mode, and the condensation of the Q R -point mode can be explained as due to a biquadratic coupling with the Q Σ m...

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“…On the other hand, Tenne et al 20 studied vibrational properties of Ba 0.5 Sr 0.5 TiO 3 thin films prepared by pulsed laser deposition and they observed that the temperature dependence of the Raman spectra indicates a broad ferroelectric phase transition in the thin films. Dobal et al 21 studied, by Raman scattering and dielectric constant as a function of the temperature, the antiferroelectric phase transition in PbZrO 3 thin films. These PbZrO 3 thin films exhibited a clear temperature-dependent phase transition from the antiferroelectric to paraelectric state, through a ferroelectric phase.…”

Section: Introductionmentioning

confidence: 99%

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

Pontes

Leite

Longo

et al. 2003

Journal of Applied Physics

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We have studied the phase transition behavior of Pb 0.76 Ca 0.24 TiO 3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb 0.76 Ca 0.24 TiO 3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. On the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV.

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Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films

Cited by 27 publications

References 18 publications

Investigation of phase transition in ferroelectric Pb0.70Sr0.30TiO3 thin films

Investigation of phase transition in ferroelectric Pb0.70Sr0.30TiO3 thin films

Multiple Soft-Mode Vibrations of Lead Zirconate

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

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