Micro reflectance difference techniques: Optical probes for surface exploration

Abstract

Micro reflectance difference spectroscopy (m-RDS) is a promising tool for the in-situ and ex-situ characterization of semiconductors surfaces and interfaces. We discuss and compare two different approaches used to measure m-RD spectra. One is based on a charge-coupled device (CCD) camera, while the other uses a laser and a XY translation stage. To show the performance of these systems, we have measured surface optical anisotropies of GaSb(001) sample on which anisotropic strains have been generated by preferential mechanical polishing along [110] and ½110 directions. The spectrometers are complementary and the selection of one of them depends on the sample to be investigated and on experimental conditions.

Reflectance difference microscopy for nanometre thickness microstructure measurements

“…The RD image of the sample is obtained by subtracting two CCD images, which is hard to get better signal‐to‐noise ratio. Recently, they presented another solution called as laser‐based RDM setup, which moves the sample stage with high spatial resolution to realize RD imaging (Lastras‐Martínez et al ., ).…”

Multi‐Material Strain Mapping with Scanning Reflectance Anisotropy Microscopy

“…Typical setups exhibit a probing spot of a couple of millimetres, as increasing the angle of incidence for focusing poses problems due to the high polarization sensitivity of the technique. [24,25] To compensate this short-coming, various setups have been proposed [26][27][28][29][30] but the remarkable potential of this technique as versatile multi-material platform for strain mapping remains unexplored.…”