Micro-thermoelectric cooler: interfacial effects on thermal and electrical transport

Silva, Luciana W. da; Kaviany, Massoud

doi:10.1016/j.ijheatmasstransfer.2003.11.024

Cited by 213 publications

(113 citation statements)

References 31 publications

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“…This is especially the case for devices with multiple interfaces such as superlattices [2] and very large scale integrated (VLSI) circuits. Specific applications where TBR is currently being considered are thermoelectrics [3,4], thin-film high temperature superconductors [5,6], vertical cavity surface emitting lasers [7], and optical data storage media [8]. More applications are sure to follow.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Study of Thermal Boundary Resistance: Evidence of Strong Inelastic Scattering Transport Channels

Stevens

Zhigilei

2004

Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology

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With the ever-decreasing size of microelectronics, growing applications of superlattices, and development of nanotechnology, thermal resistances of interfaces are becoming increasingly central to thermal management. Although there has been much success in understanding thermal boundary resistance (TBR) at low temperature, the current models for room temperature TBR are not adequate. This work examines TBR using molecular dynamics (MD) simulations of a simple interface between two FCC solids. The simulations reveal a temperature dependence of TBR, which is an indication of inelastic scattering in the classical limit. Introduction of point defects and lattice-mismatch-induced disorder in the interface region is found to assist the energy transport across the interface. This is believed to be due to the added sites for inelastic scattering and optical phonon excitation. A simple MD experiment was conducted by directing a phonon wave packet towards the interface. Inelastic scattering, which increases transport across the interface, was directly observed. Another mechanism of energy transport through the interface involving localization of optical phonon modes at the interface was also revealed in the simulations.

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Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Study of Thermal Boundary Resistance: Evidence of Strong Inelastic Scattering Transport Channels

Stevens

Zhigilei

2004

Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology

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“…The thermal boundary resistance is an important problem for nanosystems because it can dominate the overall resistance of the structure when the dimension becomes small. This phenomenon can be utilized to improve the figure of merit of thermoelectric materials 3,4 . It can also cause local temperature accumulation leading to thermal failures in microelectronic devices.…”

mentioning

confidence: 99%

Relationship of thermal boundary conductance to structure from an analytical model plus molecular dynamics simulations

et al. 2013

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Thermal boundary resistance dominates the overall resistance of nanosystems. This effect can be utilized to improve the figure of merit of thermoelectric materials. It is also a concern for thermal failures in microelectronic devices. The interfacial resistance sensitively depends on many interrelated structural details including material properties of the two layers, the system dimensions, the interfacial morphology, and the defect concentrations near the interface. The lack of an analytical understanding of these dependences has been a major hurdle for a science-based design of optimum systems on a nanoscale. Here we have combined an analytical model with extensive, highly-converged direct method molecular dynamics simulations to derive analytical relationships between interfacial thermal boundary resistance and structural features. We discover that thermal boundary resistance linearly decreases with total interfacial area that can be modified by interfacial roughening. This finding is further elucidated using wave packet analysis and local density of state calculations.

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“…30 Moreover, due to device geometry constraints and the finite nature of r c , we fixed the height of the thermoelectric elements to H TEC = 12.5 μm for our simulations since further reductions in element height provided little to no performance gains. Figure 5 shows the temperature field within the μTEC-integrated hybrid laser for a representative simulated case using ED thermoelectric material properties.…”

Section: Numerical Implementationmentioning

confidence: 99%

Integrated Thermoelectric Cooling for Silicon Photonics

Enright¹,

Lei²,

Cunningham³

et al. 2017

ECS J. Solid State Sci. Technol.

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Integrated silicon photonics has emerged as a scalable optoelectronic platform to meet the demands for increased bandwidth in communication networks. However, integration introduces new thermal challenges to achieving the required system performance. Here we present the design of a micro thermoelectric temperature controller integrated around a III-V-on-silicon hybrid waveguide. We briefly outline the thermal requirements to ensure suitable hybrid laser performance for a long reach optical communication application on a silicon photonics platform, namely an active region temperature of ≤ 54 • C. We then develop a multiphysics numerical model of a micro thermoelectric temperature controller integrated around the waveguide and assess our design in terms of ambient operating temperatures of 80 • C relevant for an integrated optoelectronic system. Our simulations indicate that state-ofthe-art electrodeposited bismuth telluride can achieve the required refrigeration with suitable system design optimization. Despite characteristically low cooling efficiencies compared to a macroscopic thermoelectric module solution, considering overall system energy consumption shows that targeted refrigeration using our integrated thermoelectric design can be beneficial when cooling up to ∼20% of the overall system thermal load. Our results show the promise of integrated thermoelectric temperature control to meet the thermal requirements for integrated silicon photonics under realistic operating conditions. © The Author With the promise of highly integrated, high performance optoelectronic devices for communication applications, silicon photonics has emerged as a scalable solution to meet the demands for increased bandwidth in communication networks. An ultimate vision for silicon photonics realizes the integration of both electronic and photonic functionality in optoelectronic devices.1,2 However, while such level of integration has the potential to significantly reduce packaging costs and improve optoelectronic system efficiency, it introduces new thermal challenges alongside already existing ones; all of which have to be dealt with against the backdrop of the need for more compact, higher performance and energy efficient thermal solutions. In particular, the performance of active photonic devices, such as semiconductor lasers and optical amplifiers, are temperature sensitive. Moreover, these active photonic devices are required to operate at temperatures significantly lower than their electronic counterparts and often below standards-defined operating ambient temperatures required for telecommunications equipment. In traditional non-integrated optoelectronic packages, this thermal requirement has been dealt with by isolating temperature sensitive devices and cooling them using centimeter-scale thermoelectric modules (TEC). However, this solution is poorly suited to integrated optoelectronic devices sharing the same substrate and will limit the minimum system size as industry evolves toward an optoelectronic system-in-package archi...

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Micro-thermoelectric cooler: interfacial effects on thermal and electrical transport

Cited by 213 publications

References 31 publications

Molecular Dynamics Study of Thermal Boundary Resistance: Evidence of Strong Inelastic Scattering Transport Channels

Molecular Dynamics Study of Thermal Boundary Resistance: Evidence of Strong Inelastic Scattering Transport Channels

Relationship of thermal boundary conductance to structure from an analytical model plus molecular dynamics simulations

Integrated Thermoelectric Cooling for Silicon Photonics

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