Micro-transfer-printing of InP Photonic Devices to Silicon Photonics

Loi, Ruggero; О’Faolain, L.; Pelucchi, E.; Corbett, Brian; Gómez, David; O’Callaghan, James; Roycroft, B.; Trindade, António Jośe; Fecioru, Alin; Farrell, Alex; Kelleher, Steven; Gul, Raja Fazan; Iadanza, Simone

doi:10.1109/piers-spring46901.2019.9017709

“…While this paper focuses on the printing of III-V devices, it should be noted that the 𝜇TP concept is not limited to only III-V materials. Other potential source coupons include magneto-optic material films such as Ce:YIG (required for optical isolators/circulators) [21], LiNbO 3 and PZT (to implement modulators) [22,23], electronic chiplets (both control and high-speed) [24], etc.…”

Section: Micro-transfer Printingmentioning

confidence: 99%

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter

Zhang,

Bogaert,

Krueckel

et al. 2023

Preprint

0

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We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (μTP). After the introduction of the μTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

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“…While this paper focuses on the printing of III-V devices, it should be noted that the 𝜇TP concept is not limited to only III-V materials. Other potential source coupons include magneto-optic material films such as Ce:YIG (required for optical isolators/circulators) [21], LiNbO 3 and PZT (to implement modulators) [22,23], electronic chiplets (both control and high-speed) [24], etc.…”

Section: Micro-transfer Printingmentioning

confidence: 99%

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter

Zhang,

Bogaert,

Krueckel

et al. 2023

Preprint

0

View full text Add to dashboard Cite

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (μTP). After the introduction of the μTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

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Micro-transfer printing of InGaAs/InP avalanche photodiode on Si substrate

Alimi,

Guilhabert,

Jevtics

et al. 2024

Semicond. Sci. Technol.

0

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We report on the fabrication and micro-transfer printing of InGaAs/InP avalanche photodiodes (APDs) onto silicon substrates. A process flow was developed to suspend the devices using semiconductor tethers. The developed process reduces the number of fabrication steps required compared to methods based on the use of photoresist tethers. Furthermore, our process is compatible with devices that may be susceptible to damage induced by the photoresist removal process. APDs were characterised in linear mode operation both before suspension and after printing. Despite the additional fabrication steps required to suspend the APD membranes and the physical nature of the micro-transfer printing process, the electrical characteristics of the devices were preserved. No degradation in the optical performance of the devices was measured. Our work represents the first demonstration of micro-transfer printing of InGaAs/InP avalanche photodiodes onto silicon substrates. The results highlight the viability of micro-transfer printing for effective heterogeneous integration of InGaAs/InP avalanche photodiodes with silicon photonic integrated circuits for optical and quantum communication and other light detection applications.

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Micro-transfer-printing of InP Photonic Devices to Silicon Photonics

Cited by 4 publications

References 23 publications

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitter

Micro-transfer printing of InGaAs/InP avalanche photodiode on Si substrate

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