Microbolometer development and production at Indigo Systems

Terre, William A.; Cannata, Robert F.; Franklin, Patrick; Gonzalez, A. R.; Kurth, Eric; Ly, Hiep; Parrish, William J.; Peters, Kevin; Romeo, Tommie; VanYsseldyk, Robert

doi:10.1117/12.487317

Cited by 10 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So far only VOx and α-silicon has proven to be commercially viable bolometer materials integrated on top of ROIC wafers [1]. The drawbacks of these materials have on the other hand been higher inherent material 1/f-noise due to its amorphous and polycrystalline structure compared with mono-crystalline materials, and a relatively low yield and uniformity compared with standard CMOS processing [2].…”

Section: Introduction Bolometric Infrared Sensorsmentioning

confidence: 98%

High-performance quantum-well silicon-germanium bolometers using IC-compatible integration for low-cost infrared imagers

Forsberg

Roxhed

Ericsson

et al. 2009

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

View full text Add to dashboard Cite

This paper reports on the realization and characterization of the very first quantum-well (QW) mono-crystalline Si/SiGe 18x18 pixel infrared bolometer arrays that are manufactured using IC compatible heterogeneous 3D integration on fan-out wafers. This integration process enables bolometer materials on top of CMOS-based integrated circuits that can not be integrated with conventional monolithic deposition techniques. The manufactured bolometer arrays have a negative temperature coefficient of resistance (TCR) of 2.8%/K. Measurements of the 1/f noise showed a higher value than expected for the bolometers. This result can be compared to lower values of noise achieved for samples of the thermistor material and is believed to result from imperfect metal contacts.

show abstract

Section: Introduction Bolometric Infrared Sensorsmentioning

confidence: 98%

High-performance quantum-well silicon-germanium bolometers using IC-compatible integration for low-cost infrared imagers

Forsberg

Roxhed

Ericsson

et al. 2009

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

View full text Add to dashboard Cite

show abstract

“…Amorphous silicon material is well known for many applications and its use for uncooled infrared detector production benefits from a simple technology easier to master than other technologies making use of different material [ 2 ] , [ 3 ] , [ 4 ]. The advantage of amorphous silicon is to be easily integrated onto silicon substrate at temperature compatible with CMOS readout integrated circuit using well mastered deposition and etching technologies.…”

Section: Detector Technologymentioning

confidence: 99%

Uncooled amorphous silicon IRFPA for high performance and high volume applications

et al. 2009

View full text Add to dashboard Cite

For more than 10 years now, uncooled sensors have given new opportunities in the IR field of applications by being able to be produce in large volume. Compared to cooled technology, uncooled detectors offer many interesting advantages: high reliability, lower cost … whereas the performance is high enough for a lot of applications. Thermography, building inspection, enhanced driver vision and military (thermal weapon sight, low altitude UAV sensor) are applications which can be provided with affordable IR focal plane arrays…. As uncooled IR sensors are mainly dedicated to these high volume applications, any uncooled IRFPA technology has to be able to provide high performance sensors but also to be producible in large volume at a minimum cost. The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon layer enables ULIS to develop a full range of IRFPA formats from 160 x 120 to 1024 x 768 pixels with 25 µm and 17 µm pixel-pitch, designed for high end and high volume applications. The detector ROIC designs rely on a simple architecture (detector configuration addressed by a serial link for user defined amplifier gain, windowing capability …) which enables easier systems upgrade and therefore a reduced system development non recurrent cost. The packaging technique depends on the application environment and the production volume in order to fit with the market expectation. Starting from metallic and ceramics package, very advanced new technique is under development in order to reduce uncooled IRFPA production cost. NETD in the range of 30 mK (f/1, 300 K, 60 Hz) as well as operability higher than 99.99 %, are routinely achieved with amorphous silicon technology.

show abstract

Section: Detector Technologymentioning

confidence: 99%

P2.4 - Uncooled Amorphous Silicon IRFPA for High Performance and High Volume Applications

Tissot¹,

Crastes²,

Vilain³

et al. 2009

Proceedings SENSOR 2009, Volume II

View full text Add to dashboard Cite

Microbolometer development and production at Indigo Systems

Cited by 10 publications

References 0 publications

High-performance quantum-well silicon-germanium bolometers using IC-compatible integration for low-cost infrared imagers

High-performance quantum-well silicon-germanium bolometers using IC-compatible integration for low-cost infrared imagers

Uncooled amorphous silicon IRFPA for high performance and high volume applications

P2.4 - Uncooled Amorphous Silicon IRFPA for High Performance and High Volume Applications

Contact Info

Product

Resources

About