2021
DOI: 10.1364/oe.435077
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Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser: erratum

Abstract: We correct a mistake in [Opt. Express 27, 11914 (2019)10.1364/OE.27.011914] when calculating the focal length of the Kerr lens with the measured values of the nonlinear refractive index n2 and parameters of a prototypical self-mode-locking VECSEL cavity. We therefore update Fig. 1 of the original publication. The new calculation yields a significantly larger value of the Kerr lens focal length leading to a smaller perturbation of the cavity beam profile.

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“…Additionally, the n 2 values of CuFeTe 2 nanosheets are found to be 1−2 orders of magnitude larger compared with typical optical switching materials such as Si (4.5 × 10 −14 cm 2 / W) 55 and GaAs (3.25 × 10 −13 cm 2 /W) 56 and comparable to or higher than that of other 2D materials, 51−54 which makes CuFeTe 2 nanosheets promising candidates for self-defocusing based nonlinear photonic applications, such as ultrafast pulses self-compression in positive group-velocity dispersion 57 and the Kerr mode-locking technique. 58 Knowing that the prepared CuFeTe 2 nanosheets are a zeroband gap semiconductor when CuFeTe 2 nanosheets are excited by laser pulses in the NIR range, free carriers would be generated as a result of linear absorption. When laser intensity rises further, populated free carriers would fill the conduction band and prohibit the following electrons from enrolling in the conduction band, namely the band filling effect, commonly occurring within the direct band gap semiconductors.…”
mentioning
confidence: 99%
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“…Additionally, the n 2 values of CuFeTe 2 nanosheets are found to be 1−2 orders of magnitude larger compared with typical optical switching materials such as Si (4.5 × 10 −14 cm 2 / W) 55 and GaAs (3.25 × 10 −13 cm 2 /W) 56 and comparable to or higher than that of other 2D materials, 51−54 which makes CuFeTe 2 nanosheets promising candidates for self-defocusing based nonlinear photonic applications, such as ultrafast pulses self-compression in positive group-velocity dispersion 57 and the Kerr mode-locking technique. 58 Knowing that the prepared CuFeTe 2 nanosheets are a zeroband gap semiconductor when CuFeTe 2 nanosheets are excited by laser pulses in the NIR range, free carriers would be generated as a result of linear absorption. When laser intensity rises further, populated free carriers would fill the conduction band and prohibit the following electrons from enrolling in the conduction band, namely the band filling effect, commonly occurring within the direct band gap semiconductors.…”
mentioning
confidence: 99%
“…The prepared CuFeTe 2 nanosheets display promising broadband ultrafast saturation absorption owing to its zero bandgap and relative low saturation intensity ( I s ). Additionally, the n 2 values of CuFeTe 2 nanosheets are found to be 1–2 orders of magnitude larger compared with typical optical switching materials such as Si (4.5 × 10 –14 cm 2 /W) and GaAs (3.25 × 10 –13 cm 2 /W) and comparable to or higher than that of other 2D materials, which makes CuFeTe 2 nanosheets promising candidates for self-defocusing based nonlinear photonic applications, such as ultrafast pulses self-compression in positive group-velocity dispersion and the Kerr mode-locking technique …”
mentioning
confidence: 99%